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Fairchild Semiconductor |
April 2007
4N29, 4N30, 4N31, 4N32, 4N33
General Purpose 6-Pin Photodarlington Optocoupler
tm
Features
■ High sensitivity to low input drive current
■ Meets or exceeds all JEDEC Registered
Specifications
■ VDE 0884 approval available as a test option
– add option .300. (e.g., 4N29.300)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Description
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
Packages
White Package (-M Suffix)
6
6
1
1
6
1
Black Package (No -M Suffix)
6
16
6
1
1
www.DataSheet4U.com
Schematic
ANODE 1
CATHODE 2
N/C 3
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
6 BASE
5 COLLECTOR
4 EMITTER
www.fairchildsemi.com
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol
Parameter
Device
TOTAL DEVICE
TSTG
Storage Temperature
Non M
M
TOPR
Operating Temperature
Non M
M
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
EMITTER
IF
VR
IF(pk)
PD
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
DETECTOR
BVCEO
BVCBO
BVECO
PD
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
All
All
All
All
IC Continuous Collector Current
All
Value
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
2
www.fairchildsemi.com
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