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NUD3048 반도체 회로 부품 판매점

FET Switch



ON Semiconductor 로고
ON Semiconductor
NUD3048 데이터시트, 핀배열, 회로
NUD3048
FET Switch
100 V, 800 mW, N−Channel, TSOP−6
The NUD3048 provides a single device solution for a number of
applications requiring a low power, high voltage, FET switch. The
package includes a gate resistor and gate to source zener clamp. This
switch can accommodate a wide range of input voltages, making it
compatible with most current logic levels. Its 100 V rating makes it
compatible with 48 V telecom applications.
Features
100 V Rating On Gate 2
Integrated 100 k Rg Option
Integrated ESD Diode Protection
Low Threshold Voltage
Pb−Free Package is Available
Typical Applications
FET Switch
Inverter
Level Shifter
Inrush Limiter
Relay Driver
www.DataSheet4U.com
Drain
2, 4, 5
6
Gate 2
100 kW
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MARKING
DIAGRAM
6
1
TSOP−6
CASE 318G
STYLE 9
6
1
JW7 MG
G
JW7 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NUD3048MT1 TSOP−6 3000 / Tape & Reel
NUD3048MT1G TSOP−6 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Gate 1
3
Source
Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1
Publication Order Number:
NUD3048/D


NUD3048 데이터시트, 핀배열, 회로
NUD3048
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VDSS
VG1SS
ID
Drain to Source Voltage – Continuous
Gate to Source Voltage – Continuous @ 1.0 mA
Drain Current – Continuous (TA =25_C) (Note 1)
(Note 2)
100 V
15 V
0.7 A
1.2
PD Power Dissipation (TA =25_C) (Note 1)
(Note 2)
0.66 W
1.56
VG2SS
TJmax
RqJA
Gate Resistor to Source Voltage – Continuous
Maximum Junction Temperature
Thermal Impedance (Junction−to−Ambient) (Note 1)
Thermal Impedance (Junction−to−Ambient) (Note 2)
100 V
150 °C
190 °C/W
80
ESD
Human Body Model (HBM) Class 2
Machine Model Class A
According to EIA/JESD22/A114 Specification
2000
160
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ =25_C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain to Source Leakage Current (VDS = 80 V, VGS = 0 V)
Gate Body Leakage Current
(VGS =10 V, VDS = 0 V)
(VGS = 10 V, VDS = 0 V, TJ = 125°C)
IDSS
IGSS
IGSS
20 100 mA
mA
3.0 10
6.0 20
ON CHARACTERISTICS
Gate Threshold Voltage (ID = 1.0 mA)
Drain to Source Resistance (VGS = 4.5 V, ID = 100 mA)
Drain to Source Resistance (VGS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
GATE BIAS CHARACTERISTICS
Gate Resistor
Gate Zener Breakdown Voltage (IZ = 1.0 mA) (Note 3)
Gate Zener Breakdown Voltage (IZ = 3.0 mA) (Note 4)
1. Min pad, 1 oz. Cu.
2. 1 inch pad, 1 oz Cu.
3. Measured from gate 1 to source.
4. Measured from gate 2 to source.
VGS
RDS(on)
RDS(on)
Ciss
Coss
Crss
RG
VZ
1.3
75
15
100
1.7
0.65
0.6
135
75
26
100
17
115
2.0 V
0.82 W
0.72 W
− pF
− pF
− pF
125 kW
−V
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2




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