파트넘버.co.kr RA03M8894M 데이터시트 PDF


RA03M8894M 반도체 회로 부품 판매점

2 Stage Amp



Mitsubishi Electric 로고
Mitsubishi Electric
RA03M8894M 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA03M8894M
RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 889- to
941-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=7.2V, VGG=0V)
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
ηT>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 889-941MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANT
• RA03M8894M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA03M8894M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA03M8894M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006


RA03M8894M 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT RA03M8894M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG<3.5V
VGG Gate Voltage
VDD<7.2V, Pin=0mW
Pin Input Power
Pout Output Power
f=889-941MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
9.2
4
70
5
-30 to +90
-40 to +110
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
889 941 MHz
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
VDD=7.2V,VGG=3.5V, Pin=50mW
Pout=3W (VGG control),
VDD=7.2V,
Pin=50mW
3.6 W
32 %
-30 dBc
4:1 —
1 mA
— Stability
VDD=4.0-9.2V, Pin=25-70mW, Pout<5W (VGG control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
VDD=9.2V, Pin=50mW, Pout=3.6W (VGG control),
Load VSWR=20:1
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M8894M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Mitsubishi Electric

( mitsubishi )

RA03M8894M data

데이터시트 다운로드
:

[ RA03M8894M.PDF ]

[ RA03M8894M 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RA03M8894M

2 Stage Amp - Mitsubishi Electric