XN09D58 반도체 회로 부품 판매점
Silicon PNP Epitaxial Transistor
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 Panasonic Semiconductor |
Composite Transistors
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XN09D58
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
0.50+–00..0150
0.30+–00..0150
Unit: mm
0.16+–00..0160
■ Features
• Two elements incorporated into one package (Tr + SBD)
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage VCE(sat)
■ Basic Part Number
• XN9D57 + MA3ZD12
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr
Collector-base voltage
VCBO
−15
(Emitter open)
V
Collector-emitter voltage
(Base open)
VCEO
−15
V
Emitter-base voltage
(Collector open)
VEBO
−5
V
SBD
Collector current
Peak collector current
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak
forward surge current
IC
ICP
VR
VRRM
IF(AV)
IFSM
−2.5
−10
20
25
700
2
A
A
V
V
mA
A
Overall
Total power dissipation *
Junction temperature
Storage temperature
PT 600 mW
Tj 125 °C
Tstg −55 to +125 °C
Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr
65
4
123
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
Display at No.1 lead
10°
1: Emitter
2: Base
3: Anode
4: Collector (Cathode)
5: Collector (Cathode)
6: Collector (Cathode)
Mini6-G1 Package
Marking Symbol: EF
Internal Connection
65
4
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −2 V, IC = −100 mA
VCE = −2 V, IC = −2.5 A
IC = −1 A, IB = −10 mA
IC = −2.5 A, IB = −50 mA
−15
−15
−5
− 0.1
200 560
100
−140
−270 −320
V
V
V
µA
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: March 2004
SJJ00246CED
1
XN09D58
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr (continued)
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
40 pF
Transition frequency
Turn-on time
Storage time
Turn-off time
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
ton Refer to the switching time measurement circuit
tstg
toff
180
35
110
10
MHz
ns
ns
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Switching time measurement circuit
Input
IB2
IB1
Output
RB RL
PW = 20 µs
DC ≤ 1%
470 µF
VCC = −5 V
−20IB1 = 20IB2 = IC = −1.5 A
• SBD
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
VF IF = 700 mA
IR VR = 20 V
Ct VR = 0, f = 1 MHz
trr IF = IR = 100 mA, Irr = 10 mA
RL = 100 Ω
0.45
200
100
7
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes.
2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static
electricity level.
Common characteristics chart
PT Ta
600
400
200
0
0 40 80 120
Ambient temperature Ta (°C)
2
SJJ00246CED
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제조업체: Panasonic Semiconductor
( panasonic )
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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