IR1H40CSP 반도체 회로 부품 판매점
Flipky - 1 Amp
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 International Rectifier |
www.DataSheet4U.com
FlipkyTM
Features
z Ultra Low VF per Footprint Area
z Low Leakage
z Low Thermal Resistance
z One-fifth Footprint of SMA
z Super Low Profile (<.8mm)
z Available Tested on Tape & Reel
Bulletin I0149J rev. E 06/05
IR1H40CSP
1 Amp
FlipkyTM
Major Ratings and Characteristics
Characteristics
IR1H40CSP Units
IF(AV) Rectangularwaveform
1.0
A
VRRM
IFSM @ tp = 5 µs sine
VF @1.0Apk,TJ=125°C
40
250
0.42
V
A
V
TJ range
-55 to 150
°C
Description
True chip-scale packaging is available from International
Rectifier. The IR1H40CSP surface-mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, free-wheeling diodes, battery charging, and
reverse battery protection.
z Small foot print, surface mountable
z Low forward voltage drop
z High frequency operation
z Guard ring for enhanced ruggedness and long term
reliability
The FlipkyTM package, is one-fifth the footprint of a
comparable SMA package and has a profile of less then
.8mm. Combined with the low thermal resistance of the die
level device, this makes the FlipkyTM the best device for
application where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
www.irf.com
1
IR1H40CSP
Bulletin I0149J rev. E 06/05
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
IR1H40CSP
40
Absolute Maximum Ratings
Parameters
Value Units
Conditions
IF(AV) Max.Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current @ 25°C
EAS Non- Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
1.0
250
21
10
2.0
A 50%duty cycle@TPCB=117°C,rectangular waveform
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS = 2.0A, L = 5.0mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
Typ. Max. Units
Conditions
VFM Max. Forward Voltage (1)
Drop
* See Fig. 1
IRM Max. Reverse Leakage (1)
Current
* See Fig. 2
CT Max. Junction Capacitance
dv/dt Max. Volatge Rate of Charge
0.48
0.53
0.36
0.43
4
0.5
0.2
0.15
2.5
0.9
0.6
0.5
-
-
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.52
0.57
0.42
0.50
10
1
0.5
0.3
4
2
1.5
1
160
10000
V
µA
mA
pF
V/ µs
@ 1A
@ 2A
TJ = 25 °C
@ 1A
@ 2A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VR = 20V
VR = 10V
VR = 5V
VR = rated VR
VR = 20V
VR = 10V
VR = 5V
VR = 5VDC (test signal range 100kHz to 1MHz) 25°C
(Rated VR)
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
TJ Max.Junction Temperature Range (*) -55 to150 °C
Tstg Max. Storage Temperature Range -55 to150 °C
RthJL Typ.Thermal Resistance Junction
to PCB
(**)
RthJA Max.Thermal Resistance Junction
to Ambient
40 °C/W DCoperation
62 °C/W
(*) dPtot
1
dTj < Rth( j-a) thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2 www.irf.com
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