RA13H8891MA 반도체 회로 부품 판매점
2 Stage Amp
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 Mitsubishi Electric |
www.DataSheet4U.com
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA13H8891MA
RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H8891MA is a 13-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 889- to
915-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>30% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 889-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA13H8891MA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA13H8891MA-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA13H8891MA
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA13H8891MA
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=200mW
Pin Input Power
Pout Output Power
f=889-915MHz,
ZG=ZL=50Ω
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
400
25
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V
VGG=5V
Pin=200mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=100-300mW,
Pout=1 to 20W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=200mW, Pout=13W (VGG control),
Load VSWR=20:1
889 915
13
30
-35
3:1
1
No parasitic oscillation
MHz
W
%
dBc
—
mA
—
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA13H8891MA
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
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제조업체: Mitsubishi Electric
( mitsubishi )
RA13H8891MA data
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