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ON Semiconductor |
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NID5004N
Self−Protected FET
with Temperature and
Current Limit
40 V, 6.5 A, Single N−Channel, DPAK
Self–protected FETs are a series of power MOSFETs which utilize
ON Semiconductor HDPlust technology. The self–protected
MOSFET incorporates protection features such as integrated thermal
and current limits. The self−protected MOSFETs include an integrated
Drain−to−Gate Clamp that provides overvoltage protection from
transients and avalanche. The device is protected from Electrostatic
Discharge (ESD) by utilizing an integrated Gate−to−Source Clamp.
Features
• Short Circuit Protection
• In Rush Current Limit
• Thermal Shutdown with Automatic Restart
• Avalanche Rated
• Overvoltage Protection
• ESD Protection (4 kV HBM)
• Controlled Slew Rate for Low Noise Switching
• AEC Q101 Qualified
• This is a Pb−Free Device
Applications
• Solenoid Driver
• Relay Driver
• Small Motors
• Lighting
• Relay Replacement
• Load Switching
http://onsemi.com
VDSS
(Clamped)
40 V
RDS(on) Typ
110 mW @ 10 V
ID Typ
(Limited)
6.5 A
Drain
Gate
Input
Overvoltage
RG Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
DPAK
CASE 369C
STYLE 2
Source
MARKING
DIAGRAM
1 YYW
2 D5
3 004NG
D5004N = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping†
NID5004NT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 1
1
Publication Order Number:
NID5004N/D
NID5004N
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Continuous
VDSS
VGS
ID
PD
44 Vdc
"14
Vdc
Internally Limited
W
1.3
2.5
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
°C/W
RRRqqqJJJCAA
3.0
95
50
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 30 Vdc, VGS = 5.0 Vdc,
IL = 1.8 Apk, L = 160 mH, RG = 25 W) (Note 3)
EAS 273
mJ
Operating and Storage Temperature Range (Note 4)
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
3. Not subject to Production Test
4. Normal pre−fault operating range. See thermal limit range conditions.
http://onsemi.com
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