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PDF NX26F011A Data sheet ( Hoja de datos )
| Número de pieza | NX26F011A | |
| Descripción | (NX26F011A / NX26F041A) 1M-BIT AND 4M-BIT SERIAL FLASH MEMORY | |
| Fabricantes | NexFlash | |
| Logotipo |  |
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NX26F011A
NNXX262F064F1A011A
NX26F041A
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY
WITH 2-PIN NXS INTERFACE
1PRE-RELEASE
MAY 1999
FEATURES
• Tailored for Portable and Mobile Media-Storage
– Ideal for portable/mobile applications that transfer
and store data, audio, or images
– Removable Serial Flash Module package option
• NexFlash ™ Non-volatile Memory Technology
– Patented Single-Transistor EEPROM Cell
– High-density, cost-effective, low-voltage/power
– 10K/100K endurance, ten years data retention
• Flash Memory for Battery-Operation
– Single 5V or 3V supply for Read, Erase/Write
– Icc 5 mA active with 1 µA standby power
– 5 ms Erase/Write times for efficient battery use
2
• 1M-bits or 4M-bits of NexFlash Serial Memory
– 512 or 2,048 sectors of 264 bytes each
– Simple commands: Reset, Read, Write,
Ready/Busy
– No pre-erase required, auto-erases before write
• Two-pin NXS Serial Interface
– Saves Microcontroller-pins, simplifies PCB layout,
low switching noise compared to parallel Flash
– Supports clock operation as fast as 16 MHz
– Multi-device cascading, up to 16 devices
3
4
5
• Development Tools and Accessories
– SFK-NXS Serial Flash Development Kit
6
7
Description
The NexFlash™ NX26F011A and NX26F041A Serial Flash
Memories are tailored for portable/mobile media-storage
applications that transfer and store data, audio and images.
Manufactured using NexFlash’s patented single transistor
EEPROM memory cell, the NX26F011A and NX26F041A
provide a high-density, low-voltage, low-power, and cost
effective solution for battery-operated nonvolatile data
storage requirements. The NX26F011A and NX26F041A
can operate with a single 5V or 3V supply for Read, Write,
and Erase. Power consumption is very low due to µA
standby current and fast Erase/Write performance (as fast
as 5 ms per sector) that minimizes power-on time, resulting
in a highly efficient energy-per-transfer ratio. The NX26F011A
8
9and NX26F041A offer 1M-bits and 4M-bits of Flash memory
organized in sectors of 264 bytes each. Each sector is
individually addressable through basic commands or
control functions such as Reset, Read, Erase/Write, and
10Ready/Busy. The NXS (NexFlash Serial) 2-wire serial
interface is ideal for use with microcontrollers since it only
requires two pins. This leaves pins normally used for parallel
Flash free for other uses. The NXS interface supports clock
11ratesasfastas16MHzandallowsformulti-device cascading
of up to 16 devices. It also simplifies PC-board layout and
generates less transient noise than parallel devices. Devel-
opment is supported with the NexFlash Serial Flash
Development Kit.
12
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 1998, NexFlash Technologies, Inc.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
1
1 page  
NX26F011A
NX26F041A
Command
Address
Reserved
Status
Data
INITIAL CLOCK
To wake device from standby
(Data is "Don't Care")
COMMAND TYPE
1H = Read
C3-C0 SA11-0 DA3-0 SA15-12 R31-R0 S15-S0 D0 - - - D2112
MAIN SECTOR ADDRESS
000H-1FF for NX26F011A
000H-7FF for NX26F041A
DEVICE ADDRESS
A0-A3 pins = 0H-FH
AUXILARY SECTOR ADDRESS
0H = To address main sector address 0-FFF
5H = Device information sector
RESERVED
Use 00 00 00 00H
INPUT STATUS BYTES
9999H = Ready, 6666H = Busy
Note: Delay is required during
status byte read, see tRP in
AC Characteristics
INPUT SECTOR DATA BITS
0-2112 (264 Bytes)
1
2
3
4
5
6
7
8
9
Figure 5. Sector Read Instruction - Sequence and Bit Instruction
10
11
12
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
5
5 Page 
NX26F011A
NX26F041A
AC ELECTRICAL CHARACTERISTICS
Symbol
tCP
tCL, tCH
tCR
tCF
tDS
tDH
tDV
tRESET
tRP
tWP
Description
SCK Serial Clock Period
SCK Serial Clock High or Low Time
SCK Serial Clock Rise Time(1)
SCK Serial Clock Fall Time(1)
SIO Setup Time to SCK Rising Edge
SIO Hold Time From SCK Rising Edge
SIO Valid after SCK(2)
SCK Low Duration for
Valid Reset or Standby (See Figures 9 & 10)
Read Pre-data Delay (See Figure 9)
Erase/Write Program Time(3) (See Figure 10)
5V (16 MHz)
Min Typ Max
62 — —
26 — —
—— 7
—— 7
40 — —
0 ——
— — 60
1.5 — 5
30 — —
—3 5
3V (8 MHz)
Min Typ Max
125 — —
57 — —
— —5
— —5
100 — —
0 ——
— — 115
3 — 10
100 — —
— 5 10
Unit
ns
ns
ns
ns
ns
ns
ns
µs
µs
ms
Notes:
1. Test points are 10% and 90% points for rise/fall times. All other timings are measured at the 50% point.
2. With 50 pF (8 MHz) or 30 pF (16 MHz) load SIO to GND.
3. The NX26F011A and NX26F041A are designed for Erase/Write endurances of 10K cycles. Endurance in the range of 100K
cycles can be obtained using ECC software methods like those provided in the SFK Serial Flash Development Kit.
1
2
3
4
5
6
CLOCK AND DATA TIMING
7
8
9
tCP
tCH tCL
tCF tCR
SCK
tDV
tDV
tDS
tDH
10
SIO
Read
Write
11
12
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet NX26F011A.PDF ] | |
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