파트넘버.co.kr EM25LV010 데이터시트 PDF


EM25LV010 반도체 회로 부품 판매점

Flash Memory



ELAN Microelectronics 로고
ELAN Microelectronics
EM25LV010 데이터시트, 핀배열, 회로
www.DataSheet4U.com
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
General Description
The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single
voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and
a typical 40ms Block-Erase time. The device uses status register to detect the completion of
the Program or Erase operation. To protect against inadvertent write, the device has on-chip
hardware and software data protection schemes. The device offers typical 100,000 cycles
endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI
Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data
in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The
Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.
The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD,
please contact ELAN Microelectronics or its representatives for detailed information (see
Appendix at the bottom of this specification for Ordering Information).
The EM25LV010 devices are suitable for applications that require memories with convenient
and economical updating of program, data or configurations, e.g., graphic cards, hard disk
drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.
Features
Single Power Supply
Full voltage range from 2.7 to 3.6
volts for both read and write operations
Regulated voltage range: 3.0 to 3.6
volts for both read and write operations
Small block Erase Capability
Block: Uniform 32K bytes
Clock Rate
33MHz (Maximum)
Power Consumption
Active Current: 4mA (Typical)
Power-down Mode Standby
current: 1µA (Typical)
Page Program Features
Up to 256 Bytes in 2ms (Typical)
Erase Features
Block-Erase Time: 40ms (Typical)
Chip-Erase Time: 40ms (Typical)
Automatic Write Timing
Internal VPP Generation
SPI Bus Compatible Serial Interface
High Reliability:
Endurance cycles: 100K (Typical)
Data retention: 10 years
Package Option
8-lead-SO (150 mil)
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 1 of 30


EM25LV010 데이터시트, 핀배열, 회로
Pin Assignments
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
S#
Q
W#
VSS
18
2 SO8 7
3 Top View 6
45
VCC
HOLD#
C
D
Figure 0: Pin Assignments
Pin Description
Pin Name
C
D
Q
S#
W#
Hold#
VDD
VSS
Function
Serial Clock 1
Serial Data Input 2
Serial Data Output 3
Chip Select 4
Write Protect 5
Hold 6
Supply Voltage
Ground
Table 1: Pin Description
1 Serial Clock (C):
This input pin provides the timing for serial input and output operations. Instructions,
addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial
Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2 Serial Data Input (D):
This input pin provides a means for instructions, addresses, and data to be serially written to
the device. Data is latched on the rising edge of Serial Clock (C).
3 Serial Data Output (Q):
This output pin provides a means for data and status to be serially read from the device. Data
is shift out on the falling edge of Serial Clock (C).
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 2 of 30




PDF 파일 내의 페이지 : 총 30 페이지

제조업체: ELAN Microelectronics

( elan )

EM25LV010 data

데이터시트 다운로드
:

[ EM25LV010.PDF ]

[ EM25LV010 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


EM25LV010

Flash Memory - ELAN Microelectronics