K3314 반도체 회로 부품 판매점
MOSFET ( Transistor ) - 2SK3314
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 Toshiba Semiconductor |
2SK3314
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3314
Chopper Regulator, DC−DC Converter Applications
Motor Drive Applications
Unit: mm
l Fast reverse recovery time
: trr = 105 ns (typ.)
l Built−in high−speed free−wheeling diode
l Low drain−source ON resistance : RDS (ON) = 0.35 Ω (typ.)
l High forward transfer admittance : |Yfs| = 9.9 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
15
60
150
630
15
15
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-01-25
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn−on time
Fall time
ton
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs VDD ≈ 400 V, VGS = 10 V, ID = 15 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK3314
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
500 —
—
2.0 — 4.0
— 0.35 0.49
5.0 9.9 —
— 2600 —
— 280 —
— 880 —
µA
V
µA
V
V
Ω
S
pF
— 50 —
— 85 —
ns
— 65 —
— 260 —
— 58 —
— 36 —
— 22 —
nC
Min Typ. Max Unit
— — 15 A
— — 60 A
—
— −1.7
V
— 105 180 ns
— 0.24 —
µC
2 2002-01-25
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( toshiba )
K3314 data
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