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PDF DN1509 Data sheet ( Hoja de datos )

Número de pieza DN1509
Descripción N-Channel Depletion-Mode Vertical DMOS FET
Fabricantes Supertex 
Logotipo Supertex Logotipo



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DN1509
N-Channel Depletion-Mode Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakages
Applications
Normally-on switches
Battery operated systems
Converters
Linear amplifiers
Constant current sources
Telecom
Ordering Information
Device
Package Option
TO-243AA (SOT-89)
DN1509
DN1509N8-G
-G indicates package is RoHS compliant (‘Green’)
General Description
The Supertex DN1509 is suitable for high voltage transient
protection for LDO in automobile applications during “load
dump” conditions.
This low threshold, depletion-mode (normally-on)
transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
BVDSX/BVDGX RDS(ON) (max)
90V 6.0Ω
IDSS (typ)
540mA
Product marking for TO-243AA:
DN5A
where = 2-week alpha date code
Absolute Maximum Ratings
Parameter
Value
Drain to source voltage
Drain to gate voltage
Gate to source voltage
BVDSX
BVDGX
±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature1
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
D
GD S
TO-243AA (SOT-89)
(Top View)

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