파트넘버.co.kr XN06401 데이터시트 PDF


XN06401 반도체 회로 부품 판매점

Silicon PNP Epitaxial Transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
XN06401 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Composite Transistors
XN06401 (XN6401)
Silicon PNP epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SB0709A (2SB709A) × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
60
50
7
100
200
300
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5O
Internal Connection
45
6
Tr2 Tr1
321
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
hFE ratio *
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE(Small/
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
VCE = −10 V, IC = −2 mA
60
50
7
0.1
100
160 460
0.50 0.99
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Large)
VCE(sat)
fT
Cob
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
0.3
80
2.7
0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00106BED
1


XN06401 데이터시트, 핀배열, 회로
XN06401
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
60
Ta = 25°C
50 IB = − 300 µA
250 µA
40
200 µA
30
150 µA
20 100 µA
10 50 µA
0
0 4 8 12 16
Collector-emitter voltage VCE (V)
IC IB
60
VCE = −5 V
Ta = 25°C
50
40
30
20
10
0
0 100 200 300 400
Base current IB (µA)
400
350
IB VBE
VCE = −5 V
Ta = 25°C
300
250
200
150
100
50
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
240
200
160
IC VBE
VCE = −5 V
25°C
Ta = 75°C 25°C
120
80
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
10
1
101
VCE(sat) IC
IC / IB = 10
25°C Ta = 75°C
25°C
102
103
1
10 102 103
Collector current IC (mA)
hFE IC
600
VCE = –10 V
500
400
Ta = 75°C
300 25°C
25°C
200
100
0
1 10 102 103
Collector current IC (mA)
fT IE
160
VCB = 10 V
Ta = 25°C
140
120
100
80
60
40
20
0
101
1
10 102
Emitter current IE (mA)
Cob VCB
8
f = 1 MHz
7
IE = 0
Ta = 25°C
6
5
4
3
2
1
0
1 10 102
Collector-base voltage VCB (V)
2 SJJ00106BED




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Silicon PNP Epitaxial Transistor - Panasonic Semiconductor