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Panasonic Semiconductor |
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Composite Transistors
XN06401 (XN6401)
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SB0709A (2SB709A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
−60
−50
−7
−100
−200
300
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5O
Internal Connection
45
6
Tr2 Tr1
321
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
hFE ratio *
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
hFE(Small/
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
VCE = −10 V, IC = −2 mA
−60
−50
−7
− 0.1
−100
160 460
0.50 0.99
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Large)
VCE(sat)
fT
Cob
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
− 0.3
80
2.7
− 0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00106BED
1
XN06401
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
−60
Ta = 25°C
−50 IB = − 300 µA
−250 µA
−40
−200 µA
−30
−150 µA
−20 −100 µA
−10 −50 µA
0
0 −4 −8 −12 −16
Collector-emitter voltage VCE (V)
IC IB
−60
VCE = −5 V
Ta = 25°C
−50
−40
−30
−20
−10
0
0 −100 −200 −300 −400
Base current IB (µA)
−400
−350
IB VBE
VCE = −5 V
Ta = 25°C
−300
−250
−200
−150
−100
−50
0
0 −0.4 −0.8 −1.2 −1.6
Base-emitter voltage VBE (V)
−240
−200
−160
IC VBE
VCE = −5 V
25°C
Ta = 75°C −25°C
−120
−80
−40
0
0 −0.4 −0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
−10
−1
−10−1
VCE(sat) IC
IC / IB = 10
25°C Ta = 75°C
−25°C
−10−2
−10−3
−1
−10 −102 −103
Collector current IC (mA)
hFE IC
600
VCE = –10 V
500
400
Ta = 75°C
300 25°C
−25°C
200
100
0
−1 −10 −102 −103
Collector current IC (mA)
fT IE
160
VCB = −10 V
Ta = 25°C
140
120
100
80
60
40
20
0
10−1
1
10 102
Emitter current IE (mA)
Cob VCB
8
f = 1 MHz
7
IE = 0
Ta = 25°C
6
5
4
3
2
1
0
−1 −10 −102
Collector-base voltage VCB (V)
2 SJJ00106BED
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