XN0F262 반도체 회로 부품 판매점
Silicon NPN epitaxial planar type
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 Panasonic Semiconductor |
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Composite Transistors
XN0F262
Silicon NPN epitaxial planar type
For muting
■ Features
• Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
5
600
300
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
Mini6-G1 Package
Marking Symbol: 6C
Internal Connection
45
6
Tr2 Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
32 1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0
30 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
5V
Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
1 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 50 mA
100 600
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 2.5 mA
80 mV
Input resistance
R1
200 270 325
Ω
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJJ00229BED
1
XN0F262
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
0.7
Ta = 25°C
0.6
IB = 2.0 mA
0.5 1.6 mA
0.4 1.2 mA
0.3 0.8 mA
0.2
0.4 mA
0.1
0
0123456
Collector-emitter voltage VCE (V)
1 000
VCE = 5 V
900
IC IB
800
700
600
500
400
300
200
100
0
0 50 100 150 200 250 300 350
Base current IB (mA)
IC VBE
120
VCE = 5 V
100
Ta = 75°C
80
25°C
−25°C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
1
IC / IB = 20
0.1
Ta = 75°C
25°C
– 25°C
0.01
0.001
0.01 0.1
Collector current IC (A)
1
hFE IC
600
VCE = 5 V
500
400 Ta = 75°C
25°C
300
−25°C
200
100
0
0.001
0.01 0.1
Collector current IC (A)
1
2 SJJ00229BED
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제조업체: Panasonic Semiconductor
( panasonic )
XN0F262 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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Silicon NPN epitaxial planar type - Panasonic Semiconductor
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Silicon NPN epitaxial planar type - Panasonic Semiconductor