파트넘버.co.kr BDW94 데이터시트 PDF


BDW94 반도체 회로 부품 판매점

PNP SILICON POWER DARLINGTONS



Bourns Electronic Solutions 로고
Bourns Electronic Solutions
BDW94 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW93, BDW93A, BDW93B and BDW93C
80 W at 25°C Case Temperature
12 A Continuous Collector Current
Minimum hFE of 750 at 3V, 5 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-12
-0.3
80
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
DataSheet4 U .com
1


BDW94 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW94
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -100 mA IB = 0
(see Note 3)
BDW94A
BDW94B
-60
-80
BDW94C
-100
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
VCB = -40 V
VCB = -60 V
VCB = -80 V
VCB = -80 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
BDW94
BDW94A
BDW94B
BDW94C
-1
-1
-1
-1
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-2
Forward current
hFE transfer ratio
VCE(sat)
VBE(sat)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -20 mA
IB = -100 mA
IB = -20 mA
IB = -100 mA
IE = -5 A
IE = -10 A
IC = -3 A
IC = -10 A
IC = -5 A
IC = -5 A
IC = -10 A
IC = -5 A
IC = -10 A
IB = 0
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
-2
-3
-2.5
-4
-2
-4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
2
DataSheet4 U .com
PRODUCT INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.




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