XN01558 반도체 회로 부품 판매점
Silicon NPN epitaxial planar type
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 Panasonic Semiconductor |
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Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD2623 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
25
20
12
Collector current
IC 0.5
Peak collector current
ICP 1
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
Unit
V
V
V
A
A
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 4Z
Internal Connection
34
5
Tr2 Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
2
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
hFE ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse *3
VCBO
VCEO
VEBO
ICBO
hFE
hFE(Small
/Large)
VCE(sat)
VBE(sat)
fT
Cob
Ron
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 25 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 0.5 A
IC = 0.5 A, IB = 20 mA
IC = 0.5 A, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
25
20
12
200
0.50
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Ratio between one and another device
*3: Ron test circuit
IB = 1 mA
1
Typ Max
100
800
0.99
Unit
V
V
V
nA
0.14 0.40
1.2
200
10
V
V
MHz
pF
1.0
1 kΩ
Ω
VB VV VA
f = 1 kHz
V = 0.3 V
Publication date: December 2003
DataSheet4 U .com
SJJ00264BED
Ron =
VB ×
VA
1 000
− VB
(Ω)
1
www.DataSheet4U.com
XN01558
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
IB = 4.0 mA
0.8 3.5 mA
3.0 mA
2.5 mA
0.6 2.0 mA
1.5 mA
1.0 mA
0.4
0.5 mA
0.2
0 Ta = 25°C
0123456
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 25
10−1 Ta = 75°C
25°C
−25°C
10−2
10−3
10−1
1 10 102
Collector current IC (mA)
103
VBE(sat) IC
10
IC / IB = 10
1
25°C
Ta = −25°C
75°C
10−1
10−2
1
10 102 103 104 105
Collector current IC (µA)
hFE IC
600
VCE = 2 V
480 Ta = 75°C
25°C
360
−25°C
240
120
0
10−1 1
10 102 103
Collector current IC (mA)
Cob VCB
102
f = 1 MHz
Ta = 25°C
10
1
0 10 20 30
Collector-base voltage VCB (V)
2
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XN01558 data
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