|
Panasonic Semiconductor |
www.DataSheet4U.com
Composite Transistors
XN01501 (XN1501)
Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A (2SD601A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
60
50
7
Collector current
IC 100
Peak collector current
ICP 200
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 5R
Internal Connection
34
5
Tr2 Tr1
21
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Forward current transfer ratio
hFE ratio *
hFE
hFE(Small/
Large)
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 10 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
60
50
7
160
0.50
Typ Max
0.1
100
460
0.99
0.1 0.3
150
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: August 2003
DataSheet4 U .com
Note) The part number in the parenthesis shows conventional part number.
SJJ00028BED
1
www.DataSheet4U.com
XN01501
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
60
Ta = 25°C
IB = 160 µA
50
140 µA
40 120 µA
100 µA
30
80 µA
20 60 µA
40 µA
10
20 µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
240
VCE = 10 V
Ta = 25°C
200
IC IB
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
IB VBE
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
IC VBE
240
VCE = 10 V
200
160
120 25°C
Ta = 75°C
80
−25°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
102 IC / IB = 10
10
1
10−1
25°C
Ta = 75°C
−25°C
10−2
10−1
1 10
Collector current IC (mA)
102
hFE IC
600
VCE = 10 V
500
400 Ta = 75°C
25°C
300 −25°C
200
100
0
10−1
1
10 102
Collector current IC (mA)
fT IE
300
VCB = 10 V
Ta = 25°C
240
180
120
60
0
−10−1
–1 –10
Emitter current IE (mA)
–102
NV IC
240
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
120 Rg = 100 kΩ
80 22 kΩ
40 4.7 kΩ
0
10 102 103
Collector current IC (µA)
2
DataSheet4 U .com
SJJ00028BED
|