파트넘버.co.kr XN01501 데이터시트 PDF


XN01501 반도체 회로 부품 판매점

Silicon NPN epitaxial planar type



Panasonic Semiconductor 로고
Panasonic Semiconductor
XN01501 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Composite Transistors
XN01501 (XN1501)
Silicon NPN epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SD0601A (2SD601A) × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
60
50
7
Collector current
IC 100
Peak collector current
ICP 200
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 5R
Internal Connection
34
5
Tr2 Tr1
21
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Forward current transfer ratio
hFE ratio *
hFE
hFE(Small/
Large)
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 10 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
60
50
7
160
0.50
Typ Max
0.1
100
460
0.99
0.1 0.3
150
3.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: August 2003
DataSheet4 U .com
Note) The part number in the parenthesis shows conventional part number.
SJJ00028BED
1


XN01501 데이터시트, 핀배열, 회로
www.DataSheet4U.com
XN01501
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
60
Ta = 25°C
IB = 160 µA
50
140 µA
40 120 µA
100 µA
30
80 µA
20 60 µA
40 µA
10
20 µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
240
VCE = 10 V
Ta = 25°C
200
IC IB
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
IB VBE
1.2
VCE = 10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
IC VBE
240
VCE = 10 V
200
160
120 25°C
Ta = 75°C
80
25°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
102 IC / IB = 10
10
1
101
25°C
Ta = 75°C
25°C
102
101
1 10
Collector current IC (mA)
102
hFE IC
600
VCE = 10 V
500
400 Ta = 75°C
25°C
300 25°C
200
100
0
101
1
10 102
Collector current IC (mA)
fT IE
300
VCB = 10 V
Ta = 25°C
240
180
120
60
0
101
–1 –10
Emitter current IE (mA)
–102
NV IC
240
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
120 Rg = 100 k
80 22 k
40 4.7 k
0
10 102 103
Collector current IC (µA)
2
DataSheet4 U .com
SJJ00028BED




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