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Composite Transistors
XN01112 (XN1112)
Silicon PNP epitaxial planar type
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2112 (UN2112) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
−50
−50
−100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 7K
Internal Connection
34
5
Tr2 Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
21
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
hFE Ratio *
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE(Small
/Large)
VCE(sat)
VOH
VOL
R1
R1 / R2
fT
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
−50
−50
60
0.50
−4.9
−30%
0.8
− 0.1
− 0.5
− 0.2
0.99
− 0.25
− 0.2
22 +30%
1.0 1.2
80
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00005BED
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XN01112
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
−160
−120
−80
−40
IC VCE
IB = −1.0 mA Ta = 25°C
− 0.9mA
− 0.8mA
− 0.7mA
− 0.6mA
− 0.5mA
− 0.4mA
− 0.3mA
− 0.2mA
− 0.1mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
−100
−10
VCE(sat) IC
IC / IB = 10
−1
25°C
Ta = 75°C
− 0.1
−25°C
− 0.01
− 0.1 −1 −10 −100
Collector current IC (mA)
hFE IC
400
VCE = −10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−10
−100
−1 000
Collector current IC (mA)
Cob VCB
6
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
− 0.1
−1
−10 −100
Collector-base voltage VCB (V)
IO VIN
−104
VO = −5 V
Ta = 25°C
−103
−102
−10
−1
− 0.4
− 0.6 − 0.8 −1.0 −1.2
Input voltage VIN (V)
−1.4
−100
−10
VIN IO
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1 −10
Output current IO (mA)
−100
2
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