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Fairchild Semiconductor |
September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench SyncFET™
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
RDS(on) = 20 mΩ @ VGS = 10V
RDS(on) = 28 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (6.5 nC typical)
6.5A, 30V
RDS(on) = 29 mΩ @ VGS = 10V
RDS(on) = 38 mΩ @ VGS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
http://www.DataSheet4U.net/
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986S
FDS6986S
13”
2002 Fairchild Semiconductor Corporation
Q2
5
6
7 Q1
8
4
3
2
1
Q2 Q1
30 30
±20 ±16
7.9 6.5
30 20
2
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6986S Rev C1(W)
datasheet pdf - http://www.DataSheet4U.net/
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VGS = –16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 7.9 A
VGS = 10 V, ID = 7.9 A, TJ = 125°C
VGS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, VDS = 5 V
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 5 V, ID = 7.9 A
VDS = 5 V, ID = 6.5 A
http://www.DataSheet4U.net/
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15mV, f = 1.0 MHz
Type Min Typ Max Units
Q2 30
Q1 30
V
Q2 20 mV/°C
Q1 23
Q2 500 µA
Q1 1
Q2 100 NA
Q1
Q2 –100 nA
Q1
Q2 1 2.4
Q1 1 1.6
Q2 –6
3V
3
mV/°C
Q1 –4
Q2 16 20 mΩ
24 32
23 28
Q1 25 29
37 49
30 38
Q2 30
A
Q1 20
Q2 23
Q1 22
S
Q2 1233 pF
Q1 695
Q2 344 pF
Q1 117
Q2 106 pF
Q1 58
Q2 1.4
Q1 1.7
Ω
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q2:
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1:
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8 16 ns
7 14
5 10 ns
4.5 9
25 40 ns
20 36
11 20 ns
2.5 5
11 16 nC
6.5 9
5 nC
2.5
4 nC
1.3
FDS6986S Rev C1 (W)
datasheet pdf - http://www.DataSheet4U.net/
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