STP6NB80 반도체 회로 부품 판매점
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
|
|
 ST Microelectronics |
www.DataSheet4U.com
STP6NB80
STP6NB80FP
N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
ST P6NB8 0
ST P6NB8 0FP
800 V
800 V
< 1.9 Ω
< 1.9 Ω
5.7 A
5.7 A
s TYPICAL RDS(on) = 1.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
3
2
1
TO-220
3
2
1
TO-220FP
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
DataSheet4U.com
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
(*) Limited only maximum temperature allowed
September 1998
Va l u e
Un it
ST P6NB80 STP6NB80F P
800 V
800 V
± 30
V
5.7
5.7(*)
A
3.6 2 A
22.8
22.8
A
125 40 W
1.0
0.32
W /o C
4 4 V/ns
2000
-65 to 150
150
( 1) ISD ≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
oC
oC
1/6
DataSheet4U.com
DataShee
DataSheet4 U .com
www.DataSheet4U.com
et4U.com
STP6NB80/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
M ax
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
TO-220
1.0
TO220-FP
3.1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
5. 7
314
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
DataSheet4U.com
ON (∗)
Min.
800
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3 A
Res ist an ce
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
5.7
Typ. Max.
1
50
± 100
Typ.
4
1.6
Max.
5
1.9
Unit
V
µA
µA
nA
Unit
V
Ω
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2.5
Typ.
4.5
Max.
Unit
S
1250
145
16
1625
190
21
pF
pF
pF
DataShee
2/6
DataSheet4U.com
DataSheet4 U .com
|
PDF 파일 내의 페이지 : 총 6 페이지
제조업체: ST Microelectronics
( stm )
STP6NB80 data
데이터시트 다운로드 :
[ STP6NB80.PDF ]
[ STP6NB80 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
STP6NB80
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP - ST Microelectronics
STP6NB80FP
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP - ST Microelectronics