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International Rectifier |
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Features
• Output Power MOSFETs in half-bridge configuration
m• 500V rated breakdown voltage
• High side gate drive designed for bootstrap
ooperation
• Matched propagation delay for both channels
.c• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Half-Bridge output in phase with HIN
U• Heatsink version (P2) with improved PD
t4Description
The IR01H(D)xxx is a high voltage, high speed half
ebridge. Proprietary HVIC and latch immune CMOS
etechnologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
hpackage construction. The logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
Sdriver in phase with the logic compatible input
tasignals. The output features two HEXFETs in a half-
bridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
ahalf bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
Product Summary
VIN (max)
250V- 214/224
500V - 420
ton/off
trr
RDS(on)
130 & 90 ns
260 ns
2.0Ω - H214
1.1Ω - H224
3.0Ω - H420
PD(TA = 25oC)
2.0W
4.0W - P2
Packages
.DTypical Connection
wVIN
wVcc
w omHIN
.cL IN
heet4UCOM
HV DC Bus
D1
1 Vcc VB 6
2 HIN
VIN 9
3 L IN
VO 7
COM
4
NOTE: D1 is not required for
the HD type
TO
LOAD
www.DataS1
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VIN
VB
VO
VIH/VIL
VCC
dV/dt
PD
RTHJA
RTHJC
TJ
TS
TL
Definition
High Voltage Supply
214/224
420
High Side Floating Supply Absolute Voltage
214/224
420
Half-Bridge Output
Logic Input Voltage (HIN & LIN)
Low Side and Logic Fixed Supply Voltage
Peak Diode Recovery dv/dt
Package Power Dissipation @ TA ≤ +25oC
- P2
Thermal Resistance, Junction to Ambient
- P2
Thermal Resistance, Junction to Case (heatsink) - P2
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
- 0.3
-0.3
—
—
—
—
-55
-55
—
Max.
250
500
275
525
VIN + 0.3
Vcc + 0.3
25
3.50
2
4.0
60
30
20
150
150
300
Units
V
V
V
V
V/ns
WW
W
°C/W
oC/W
°C/W
°C
oC
°C
2
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