DataSheet.es    


PDF KM23SV64205T Data sheet ( Hoja de datos )

Número de pieza KM23SV64205T
Descripción 2M x 32 Synchronous Mask ROM
Fabricantes Samsung Semiconductor 
Logotipo Samsung Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de KM23SV64205T (archivo pdf) en la parte inferior de esta página.


Total 28 Páginas

No Preview Available ! KM23SV64205T Hoja de datos, Descripción, Manual

KM23SV64205T
Advance Information
Synch. MROM
2Mx32 Synchronous MASKROM
FEATURES
GENERAL DESCRIPTION
JEDEC standard 3.3V power supply
The KM23SV64205T is a synchronous high bandwidth mask
LVTTL compatible with multiplexed address
Address: Row address: RA0 ~ RA12
Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)
Switchable organization
4,194,304 x 16(word mode) /
programmable ROM fabricated with SAMSUNGs high perfor-
mance CMOS process technology and is organized either as
4,194,304 x16bit(word mode) or as 2,097,152 x32bit(double
word mode) depending on polarity of WORD pin.(see pin func-
2,097,152 x 32(double word mode)
tion description). Synchronous design allows precise cycle con-
All inputs are sampled at the rising edge of the system clock
trol, with the use of system clock, I/O transactions are possible
Read Performance at memory point of view
on every clock cycle. Range of operating frequencies, program-
@33MHz 4-1-1-1 (RAS Latency=1, CAS Latency=3)
@50MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)
@66MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)
m@83MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)
@100MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)
otSAC : 6ns
MRS cycle with address key programs
.c-. RAS Latency(1 & 2)
-. CAS Latency(3 ~ 6)
-. Burst Length : 4, 8
U-. Burst Type : Sequential & Interleaved
DQM for data-out masking
t4Package :86TSOP2 - 400
mable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Part NO.
KM23SV64205T-10
KM23SV64205T-12
KM23SV64205T-15
KM23SV64205T-20
KM23SV64205T-30
MAX Freq.
100MHz
83MHz
66MHz
50MHz
33MHz
Interface
LVTTL
Package
86TSOP2
eeFUNCTIONAL BLOCK DIAGRAM
hQ0 Q16
ta. S. .Output Buffer
Q15 Q31
.DaCLK
wADD
ww t4U.comLCKE
LRAS
www.DataSheeCLK CKE
2M x 32
Cell Array
Column Decoder
Latency & Burst Length
LMR
LCAS
Timing Register
Programming Register
MR
RAS
CAS
CS
DQM
* Samsung Electronics reserves the right to
change products or specification without notice.

1 page




KM23SV64205T pdf
KM23SV64205T
Advance Information
Synch. MROM
AC OPERATING TEST CONDITIONS(TA = 0 to 70°C, VDD = 3.3V±0.3V, unless otherwise noted.)
Parameter
Timing Reference Levels of Input/Output Signals
Input Signal Levels
Transition Time (Rise & Fall) of Input Signals
Output Load
Value
1.4V
VIH/VIL=2.4V/0.4V
tr/tf=1ns/1ns
LVTTL
Note : If CLK transition time is longer than 1ns, timing parameters should be compensated. Add [(tr+tf)/2-1]ns for transition time longer than 1ns. Transi-
tion time is measured between VIL(Max) and VIH(Min).
3.3V
Vtt=1.4V
Output
870
1200
VOH (DC)=2.4V, IOH=-2mA
VOL (DC)=0.4V, IOL=2mA
50pF
Output
Z0=50
50
50pF
(Fig. 1) DC Output Load Circuit
(Fig. 2) AC Output Load Circuit
OPERATING AC PARAMETERS
(AC operating conditions unless otherwise noted)
Parameter
CLK Cycle Time
CLK to Valid Output Delay
Data Output Hold Time
CLK High Pulse Width
CLK Low Pulse Width
Row-active to Row-active
Input Setup Time
Input Hold Time
CLK to Output in Low-Z
CLK to Output in High-Z
Transition Time
Valid CAS Enable to Valid
CAS Enable
Symbol
tCC
tSAC
tOH
tCH
tCL
tRC
tSS
tSH
tSLZ
tSHZ
tT
up to 100MHz
Min Max
10
-6
2-
3-
3-
10 -
2-
1-
0-
-7
0.1 10
tVCVC
8
-
up to 83MHz
Min Max
12
-6
2-
3.5 -
3.5 -
10 -
3-
1-
0-
-8
0.1 10
8-
up to 66MHz
Min Max
15 -
-6
2-
4-
4-
8-
4-
2-
0-
- 10
0.1 10
7-
up to 50 Mhz
Min Max
20 -
-6
2-
6.5 -
6.5 -
8-
4-
2-
0-
- 15
0.1 10
7-
Unit Notes
ns
ns
ns
ns
ns
clks 1
ns
ns
ns
ns
ns
clks 2
Note :
1. These tRC values are for BL=8. For BL=4, tRC=6 clks for up to 100MHz, tRC=6 clks for up to 83MHz, tRC=4 clks for up to 66MHz, tRC=4 clks for up to
50MHz, and tRC=3 clks for up to 33MHz.
RAS latency increase means, a simultaneous tRC increase in the same number of cycles.
( If RAS latency is 3 clks, tRC is 12 clks for BL=8.) Refer to attached technical note for gapless operation.
2. These tVCVC values are for BL=8. For BL=4, tVCVC=4clks for up to 100MHz, tVCVC=4clks for up to 83MHz, tVCVC=3clks for up to 66MHz, tVCVC=3clks for
up to 50MHz, and tVCVC=2clks for up to 33MHz.
Refer to attached technical note for gapless operation.

5 Page





KM23SV64205T arduino
KM23SV64205T
BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. MRS
Mode Register Set
CLK
CMD
MRS
Note 1
3CLK
ACT
2. CLOCK Suspend
Clock Suspended During Burst Read (BL=4)
CLK
CMD
CKE
Internal
CLK
RD
Masked by CKE
Data
Q0 DQ01 Q2 Q3
Advance Information
Synch. MROM
Suspended Dout
: This command do not be activated.
3. Clock Suspend Exit & power Down Exit
1) Clock Suspend Exit
CLK
CKE
Internal
CLK
CMD
tSS
RD
2) Power Down Exit
CLK
CKE
Internal
CLK
CMD
tSS
NOP ACT
Note :
1. After mode register set command is completed, no new commands can be issued for 3 clock cycles, and MR or CS should be fixed "H"
within a minimum of 3 clock cycles.

11 Page







PáginasTotal 28 Páginas
PDF Descargar[ Datasheet KM23SV64205T.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
KM23SV64205T2M x 32 Synchronous Mask ROMSamsung Semiconductor
Samsung Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar