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PDF K3299 Data sheet ( Hoja de datos )
| Número de pieza | K3299 | |
| Descripción | MOSFET ( Transistor ) - 2SK3299 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A)
•Avalanche capability ratings
•Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
600 V
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±10 A
±40 A
Total Power Dissipation (TA = 25°C) PT1
1.5 W
Total Power Dissipation (TC = 25°C) PT2
75 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Single Avalanche Current Note2
IAS
10 A
Single Avalanche Energy Note2
EAS
66.7 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14060EJ1V0DS00 (1st edition)
The mark • shows major revised points.
©
1999,2000
Date Published April 2000 NS CP(K)
Printed in Japan
1 page  
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2SK3299
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10
1
RDS(on) Limited
ID(DC)
100
PW
=
µs
10 µs
Power Dissi1p0a0t3im0o1nms0Lsmi3msm1itsmeds
TC = 25˚C
Single Pulse
0.1
1 10
100
1 000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
10 µ
100µ
1m
10m 100m
1
PW - Pulse Width - s
Rth(CH-A) = 83.3 ˚C/W
Rth(CH-C) = 1.67 ˚C/W
10 100 1 000
Data Sheet D14060EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3299.PDF ] | |
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