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256MB DIMM



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NT256D64S88A0G 데이터시트, 핀배열, 회로
NT256D64S88A0G
256MB : 32M x 64
omPC2100 / PC1600 Unbuffered DIMM
U.c184pin One Bank Unbuffered DDR SDRAM MODULE Based on DDR266/200 32Mx8 SDRAM
eet4Features
h• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module
S• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
ta• Performance :
a PC1600
PC2100
.DSpeed Sort
- 8B - 75B - 7K
wDIMM CAS Latency
2 2.5 2
wf CK Clock Frequency
100 133 133
w t CK Clock Cycle
10 7.5 7.5
Unit
MHz
ns
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
Also aligns QFC transitions with clock during Read cycles
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM CAS Latency: 2, 2.5
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
f DQ DQ Burst Frequency 200 266 266
• Intended for 100 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
m• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
o• Single Pulsed RAS interface
• SDRAMs have 4 internal banks for concurrent operation
.c• Module has one physical bank
• Differential clock inputs
• Data is read or written on both clock edges
MHz
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (row/column/bank)
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package
t4UDescription
NT256D64S88A0G is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM),
eorganized as a one-bank high-speed memory array. The 32Mx64 module is a single-bank DIMM that uses eight 32Mx8 DDR
eSDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 266MHz. The DIMM is intended for use
hin applications operating from 100 MHz to 133 MHz clock speeds with data rates of 200 to 266 MHz. Clock enable CKE0 controls all
Sdevices on the DIMM.
taPrior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the DIMM by
address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.
aThese DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common
design files minimizes electrical variation between suppliers.
.DThe DIMM uses serial presence detects implemented via a serial EEPROM using the two-pin IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The last 128 bytes are available to the customer.
wAll NANYA 184 DDR SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
wwOrdering Information
Part Number
NT256D64S88A0G-7K
NT256D64S88A0G –75B
NT256D64S88A0G –8B
Preliminary 08 / 2001
Speed
143MHz (7ns @ CL = 2.5 )
133MHz (7.5ns @ CL= 2 )
133MHz (7.5ns @ CL= 2.5 )
100MHz (10ns @ CL = 2 )
125MHz (8ns @ CL = 2.5 )
100MHz (10ns @ CL = 2 )
.comPC2100
t4UPC2100
heePC1600
Organization
32Mx64
Leads
Gold
Power
2.5V
w.DataS1
w © NANYA TECHNOLOGY CORP.
wNANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


NT256D64S88A0G 데이터시트, 핀배열, 회로
NT256D64S88A0G
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
Pin Description
CK0, CK1, CK2
CK0 , CK1 , CK2
CKE0
RAS
CAS
WE
S0
A0-A9, A11,A12
A10/AP
BA0, BA1
VREF
VDDID
Differential Clock Inputs
Clock Enable
Row Address Strobe
Column Address Strobe
Write Enable
Chip Selects
Address Inputs
Address Input/Autoprecharge
SDRAM Bank Address Inputs
Ref. Voltage for SSTL_2 inputs
VDD Identification flag.
DQ0-DQ63
DQS0-DQS7,
DQS9-DQS16
VDD
VDDQ
VSS
NC
SCL
SDA
SA0-2
VDDSPD
Pinout
Pin Front Pin Back Pin Front Pin
1
VREF
93
VSS
32
A5 124
2
DQ0
94
DQ4
33
DQ24
125
3 VSS 95 DQ5 34 VSS 126
4
DQ1
96
VDDQ
35
DQ25
127
5
DQS0
97
DQS9
36
DQS3
128
6 DQ2 98 DQ6 37 A4 129
7
VDD
99
DQ7
38
VDD
130
8
DQ3 100 VSS
39
DQ26
131
9
NC 101 NC
40
DQ27
132
10 NC 102 NC 41 A2 133
11 VSS 103 NC 42 VSS 134
12
DQ8
104 VDDQ
43
A1 135
13
DQ9
105 DQ12
44
NC 136
14 DQS1 106 DQ13 45
NC 137
15
VDDQ
107 DQS10
46
VDD
138
16 CK1 108 VDD 47
NC 139
17 CK1 109 DQ14 48
A0 140
18
VSS
110 DQ15
49
NC 141
19
DQ10
111
NC
50
VSS 142
20 DQ11 112 VDDQ 51
NC 143
21
CKE0
113
NC
52 BA1 144
22 VDDQ 114 DQ20
KEY
23
DQ16
115
A12
53
DQ32
145
24
DQ17
116
VSS
54
VDDQ
146
25
DQS2 117 DQ21
55
DQ33
147
26
VSS 118 A11
56
DQS4
148
27
A9
119 DQS11
57
DQ34
149
28
DQ18
120
VDD
58
VSS 150
29
A7
121 DQ22
59
BA0 151
30
VDDQ
122
A8
60
DQ35
152
31
DQ19 123 DQ23
61
DQ40
153
Note: All pin assignments are consistent for all 8-byte unbuffered versions.
Back
VSS
A6
DQ28
DQ29
VDDQ
DQS12
A3
DQ30
VSS
DQ31
NC
NC
VDDQ
CK0
CK0
VSS
NC
A10
NC
VDDQ
NC
KEY
VSS
DQ36
DQ37
VDD
DQS13
DQ38
DQ39
VSS
DQ44
Data input/output
Bidirectional data strobes
Power (2.5V)
Supply voltage for DQs(2.5V)
Ground
No Connect
Serial Presence Detect Clock Input
Serial Presence Detect Data input/output
Serial Presence Detect Address Inputs
Serial EEPROM positive power supply(2.5V)
Pin Front Pin Back
62
VDDQ
154
RAS
63 WE 155 DQ45
64 DQ41 156 VDDQ
65
CAS
157
S0
66 VSS 158 NC
67
DQS5
159 DQS14
68
DQ42
160
VSS
69 DQ43 161 DQ46
70 VDD 162 DQ47
71 NC 163 NC
72 DQ48 164 VDDQ
73 DQ49 165 DQ52
74 VSS 166 DQ53
75 CK2 167 NC
76 CK2 168 VDD
77
VDDQ
169 DQS15
78 DQS6 170 DQ54
79 DQ50 171 DQ55
80 DQ51 172 VDDQ
81 VSS 173 NC
82 VDDID 174 DQ60
83 DQ56 175 DQ61
84
DQ57
176
VSS
85 VDD 177 DQS16
86 DQS7 178 DQ62
87 DQ58 179 DQ63
88 DQ59 180 VDDQ
89 VSS 181 SA0
90 NC 182 SA1
91 SDA 183 SA2
92
SCL
184 VDDSPD
Preliminary 08 / 2001
2
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.




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256MB DIMM - Nanya Technology