K1120 판매점 - MOSFET ( Transistor )

K1120 반도체 회로 부품 판매점

MOSFET ( Transistor ) - 2SK1120

Toshiba Semiconductor

2SK1120

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)

2SK1120

DC−DC Converter and Motor Drive Applications

z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)

z High forward transfer admittance : |Yfs| = 4.0 S (typ.)

z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)

z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

Drain−gate voltage (RGS = 20 kΩ)

Gate−source voltage

Drain current

DC (Note 1)

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

VDSS

VDGR

VGSS

IDP

Tch

Tstg

1000

±20

150

−55 to 150

°C

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC

―

JEITA

―

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max Unit

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Rth (ch−c)

Rth (ch−a)

0.833

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

1 2009-09-29

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±20 V, VDS = 0 V

VDS = 800 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 4 A

VDS = 20 V, ID = 4 A

VDS = 25 V, VGS = 0 V, f = 1 MHz

Rise time

Switching time

Turn−on time

Fall time

ton

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qgs VDD ≈ 400 V, VGS = 10 V, ID = 8 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Symbol

IDR

IDRP

VDSF

Test Condition

—

IDR = 8 A, VGS = 0 V

Marking

2SK1120

Min Typ. Max

—

1000

1.5

—

2.0

—

1.5

4.0

1300

100

180

±100

300

—

3.5

1.8

—

Unit

μA

Ω

— 25 —

— 40 —

— 20 —

— 100 —

— 120 —

— 70 —

— 50 —

Min Typ. Max Unit

—— 8 A

— — 24 A

— — −1.9 V

K1120

Part No. (or abbreviation code)

Lot No.

Note 2

Note 2: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

2 2009-09-29

PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Toshiba Semiconductor

( toshiba )

K1120 data

데이터시트 다운로드 :

[ K1120.PDF ]

[ K1120 다른 제조사 검색 ]

국내 전력반도체 판매점

상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

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일반적인 전자부품 판매점

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K1120 반도체 회로 부품 판매점

MOSFET ( Transistor ) - 2SK1120

국내 전력반도체 판매점

일반적인 전자부품 판매점

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