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U420B 반도체 회로 부품 판매점

IRFU420B



Fairchild 로고
Fairchild
U420B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
November 2001
IRFR420B / IRFU420B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 2.3A, 500V, RDS(on) = 2.6@VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
IRFR Series
I-PAK
GDS
IRFU Series
DataSheet4U.com
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
◀▲
!
S
IRFR420B / IRFU420B
500
2.3
1.5
8.0
± 30
200
2.3
4.1
5.5
2.5
41
0.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 3.05 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B, November 2001
DataSheet4 U .com
DataSheet4U.com
DataShee


U420B 데이터시트, 핀배열, 회로
www.DataSheet4U.com
et4U.com
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C -- 0.54
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.15 A
VDS = 40 V, ID = 1.15 A (Note 4)
2.0
--
--
--
2.1
2.7
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 470
-- 45
-- 10
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 2.5 A,
DatRaGSh= e2e5 t4U.com
(Note 4, 5)
VDS = 400 V, ID = 2.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
30
40
35
14
2.4
5.8
--
--
10
100
100
-100
4.0
2.6
--
610
60
15
30
70
90
80
18
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.3
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 8.0
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.5 A,
-- 260
dIF / dt = 100 A/µs
(Note 4) -- 1.56
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 68mH, IAS = 2.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
DataShee
DataSheet4U.com©2001 Fairchild Semiconductor Corporation
DataSheet4 U .com
Rev. B, November 2001
DataSheet4U.com




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