B1063 반도체 회로 부품 판매점
PNP Transistor - 2SB1063
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 Panasonic Semiconductor |
wwwP.DoatwaSehereTt4rUa.cnomsistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1499
■ Features
• Extremely satisfactory linearity of the forward current transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−100
−100
−5
−5
−8
40
2.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
Cob
Conditions
VCE = −5 V, IC = −3 A
VCB = −100 V, IE = 0
VEB = −3 V, IC = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −3 A
IC = −3 A, IB = − 0.3 A
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
−1.8 V
−50 µA
−50 µA
20
40 200
20
−2 V
20 MHz
170 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
Publication date: February 2003
SJD00039AED
1
www2.DSatBaS1h0ee6t43U.com
PC Ta
80
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
60
(1)
40
20
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
−6
TC=25˚C
IB=–80mA
−5
–70mA
–60mA
−4 –50mA
–40mA
−3 –30mA
–20mA
−2
–10mA
−1
–5mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−6
VCE=–5V
25˚C
−5
TC=100˚C –25˚C
−4
−3
−2
−1
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
−100
−10
−1
− 0.1
VCE(sat) IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
hFE IC
104
VCE=–5V
103
TC=100˚C
25˚C
102
–25˚C
10
1 000
100
10
1
fT IC
VCE=–5V
f=1MHz
TC=25˚C
− 0.01
− 0.01
− 0.1
−1
Collector current IC (A)
−10
1
− 0.01
− 0.1
−1
Collector current IC (A)
−10
0.1
− 0.01
− 0.1
−1
Collector current IC (A)
−10
Safe operation area
−100
Non repetitive pulse
TC=25˚C
−10 ICP
IC
−1
DC
t=1ms
t=10ms
Rth t
102
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
10
1
(1)
(2)
− 0.1
10−1
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
10−2
10−3
10−2
10−1
1 10
Time t (s)
102 103 104
2 SJD00039AED
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