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ST Microelectronics |
® STP40NF03L
N - CHANNEL 30V - 0.020 Ω - 40A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(o n)
STP40NF03L 30 V < 0.022 Ω
www.DataSheet4Us.comTYPICAL RDS(on) = 0.020 Ω
s LOW THRESHOLD DRIVE
ID
40 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
30
30
VG S
ID
ID
I DM ( •)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
± 20
40
28
160
70
Derating Factor
0.46
EAS (1) Single Pulse Avalanche Energy
250
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V
October 1999
Unit
V
V
V
A
A
A
W
W /o C
m/J
oC
oC
1/8
STP40NF03L
THERMAL DATA
Rthj-case
R th j -a mb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
2. 1
6 2. 5
3 00
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
www.DataSheet4U.coVm( BR) D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc =125 oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 20 A
Resistance
VGS = 4.5 V ID = 20 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
40
Typ.
1.7
0.018
0.028
Max.
2.5
0.022
0.035
Unit
V
Ω
Ω
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =20 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
20
Max.
Unit
S
830 pF
230 pF
92 pF
2/8
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