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ST95020 반도체 회로 부품 판매점

(ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe



ST Microelectronics 로고
ST Microelectronics
ST95020 데이터시트, 핀배열, 회로
ST95040
ST95020, ST95010
4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe
1 MILLION ERASE/WRITE CYCLES
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE
– 4.5V to 5.5V for ST950x0
– 2.5V to 5.5V for ST950x0W
SPI BUS COMPATIBLE SERIAL INTERFACE
2 MHz CLOCK RATE MAX
BLOCK WRITE PROTECTION
STATUS REGISTER
16 BYTE PAGE MODE
WRITE PROTECT
SELF-TIMED PROGRAMMING CYCLE
E.S.D.PROTECTION GREATER than 4000V
SUPPORTS POSITIVE CLOCK SPI MODES
8
1
PSDIP8 (B)
0.25mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST950x0 is a family of Electrically Erasable
Programmable Memories (EEPROM) fabricated
with STMicroelectronics’s High Endurance Single
Polysilicon CMOS technology. Each memory is
accessed by a simple SPI bus compatible serial
interface. The bus signals are a serial clock input
(C), a serial data input (D) and a serial data output
(Q).
Table 1. Signal Names
C Serial Clock
D Serial Data Input
Q Serial Data Output
S Chip Select
W Write Protect
HOLD
Hold
VCC Supply Voltage
VSS Ground
VCC
D
C
S
W
HOLD
ST950x0
Q
VSS
AI01435B
June 1998
1/18


ST95020 데이터시트, 핀배열, 회로
ST95040, ST95020, ST95010
Figure 2A. DIP Pin Connections
ST950x0
S1
Q2
8 VCC
7 HOLD
W3
6C
VSS 4
5D
AI01436B
Figure 2B. SO Pin Connections
S
Q
W
VSS
ST950x0
18
27
36
45
AI01437B
VCC
HOLD
C
D
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
TSTG
TLEAD
Ambient Operating Temperature
Storage Temperature
Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
–40 to 125
–65 to 150
215
260
°C
°C
°C
VO Output Voltage
–0.3 to VCC +0.6
V
VI Input Voltage with respect to Ground
–0.3 to 6.5
V
VCC
VESD
Supply Voltage
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
–0.3 to 6.5
4000
500
V
V
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and
other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500)
3. EIAJ IC-121 (Condition C) (200pF, 0)
DESCRIPTION (cont’d)
The device connected to the bus is selected when
the chip select input (S) goes low. Communications
with the chip can be interrupted with a hold input
(HOLD). The write operation is disabled by a write
protect input (W).
Data is clocked in during the low to high transition
of clock C, data is clocked out during the high to
low transition of clock C.
SIGNALS DESCRIPTION
Serial Output (Q). The output pin is used to trans-
fer data serially out of the Memory. Data is shifted
out on the falling edge of the serial clock.
Serial Input (D). The input pin is used to transfer
data serially into the device. It receivesinstructions,
addresses, and the data to be written. Input is
latched on the rising edge of the serial clock.
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