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CDIL |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS
BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS
Power Amplifier and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
Collector current
IC
Total power dissipation up to Tmb = 25°C Ptot
Junction temperature
Tj
Collector-emitter saturation voltage
IC = 2 A; IB = 0.2 A
D.C. current gain
VCEsat
IC = 2 A; VCE = 4 V
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
IC
949
950
max. 60
max. 60
max.
max.
max.
951 953
952 954
80 100
80 100
5.0
40
150
955
956
120
120
V
V
A
W
°C
max.
1.0
V
min.
20
949
950
max. 60
max. 60
max.
max.
951 953
952 954
80 100
80 100
5.0
5.0
955
956
120
120
V
V
V
A
Continental Device India Limited
Data Sheet
Page 1 of 3
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
Collector current (Peak value)
Total power dissipation upto Tmb=25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to mounting base
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = VCBO
IE = 0; VCB = ½ VCBO; Tj = 150°C
IB = 0; VCE = ½ VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 2 A; VCE = 4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V
IC = 2 A; VCE = 4 V
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz
ICM max.
Ptot max.
Tj max.
Tstg
Rth j–a
Rth j–mb
8.0
40
150
–65 to +150
A
W
°C
°C
7 0 K /W
3.12 K /W
949 951 953 955
950 952 954 956
ICBO
ICBO
ICEO
max.
max.
max.
50
1.0
0.1
µA
mA
mA
IEBO
max.
VCEO
VCBO
VEBO
min. 60
min. 60
min.
VCEsat* max.
VBE(on)* max.
0.2 mA
80 100 120
80 100 120
5.0
V
V
V
1.0 V
1.4 V
hFE* min.
hFE* min.
40
20
fT min.
3
MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20Ω
Turn on time
NPN
Turn off time
NPN
PNP
PNP
ton typ.
toff typ.
ton typ.
toff typ.
0.3
1.5
0.1
0.4
µs
µs
µs
µs
* Measured under pulse conditions: tp ≤ 300µs; duty cycle ≤ 2%
Continental Device India Limited
Data Sheet
Page 2 of 3
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