13003BR 반도체 회로 부품 판매점
MJE13003BR
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 ETC |
www.DataSheet4U.com
MJE13003
NPN SILICON TRANSISTOR
FEATURES
Power dissipation
PCM : 1.25 W
Collector current
ICM : 1.5 A
Collector-base voltage
V(BR)CBO : 700 V
Tamb=25
TO 126
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS
Parameter
Tamb=25 unless otherwise specified
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain(note)
HFE 1
HFE 2
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Fall time
tf
Storage time
CLASSIFICATION OF HFE(1)
Rank
ts
Ic= 1000 A IE=0
Ic= 10 mA IB=0
IE= 1000 A IC=0
VCB= 700 V IE=0
VCE= 400 V IB=0
VEB= 9
V IC=0
VCE= 10 V, IC= 150 mA
VCE= 10 V, IC= 0.5 mA
IC=1000mA,IB= 250 mA
IC=1000mA, IB= 250mA
IE= 2000 mA
VCE=10V,Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
700
400
9
8
5
5
Range
8-15
15-20
20-25
25-30
30-35
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
MAX
1000
500
1000
40
UNIT
V
V
V
µA
µA
µA
1V
1.2 V
3V
MHz
0.5 µs
2.5 µs
35-40
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13003BR data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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