|
Fairchild Semiconductor |
SMALL OUTLINE OPTOCOUPLERS
DARLINGTON OUTPUT
MOC223-M
DESCRIPTION
The MOC223-M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic
silicon photodarlington detector, in a surface mountable, small outline, plastic package. It is ideally
suited for high density applications, and eliminates the need for through - the - board mounting.
FEATURES
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOC223V-M)
• Industry Standard SOIC-8 Surface Mountable Package with 0.050" lead spacing
• High Current Transfer Ratio of 500% Minimum at IF = 1 mA
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation Voltage of 2500 VAC(rms) Guaranteed
APPLICATIONS
• Low Power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics
• Solid state relays
ANODE 1
CATHODE 2
N/C 3
N/C 4
8 N/C
7 BASE
6 COLLECTOR
5 EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified)
Rating
Symbol
Value
EMITTER
Forward Current - Continuous
Forward Current - Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
IF
IF (pk)
VR
PD
60
1.0
6.0
90
0.8
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
30
7.0
70
150
150
1.76
TOTAL DEVICE
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 min.)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
VISO
PD
TA
Tstg
2500
250
2.94
-40 to +100
-40 to +150
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
© 2002 Fairchild Semiconductor Corporation
Page 1 of 7
7/17/02
SMALL OUTLINE OPTOCOUPLERS
DARLINGTON OUTPUT
MOC223-M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
DETECTOR
(IF = 1.0 mA)
(VR = 6.0 V)
VF
IR
CIN
— 1.08 1.3
— 0.001 100
— 18 —
V
µA
pF
Collector-Emitter Dark Current
(VCE = 5.0 V, TA = 25°C) ICEO1 — 1.0 50
(VCE = 5.0 V, TA = 100°C) ICEO2 — 10 —
nA
µA
Collector-Emitter Breakdown Voltage
(IC = 100 µA) BVCEO 30 100 —
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA) BVECO 7.0 10
—
V
Collector-Emitter Capacitance
(f = 1.0 MHz, VCE = 0) CCE
— 5.5 —
pF
COUPLED
Current Transfer Ratio(3)
Isolation Surge Voltage(1,2)
Isolation Resistance(2)
(IF = 1.0 mA, VCE = 5.0 V) CTR 500 1000 —
%
(f = 60 Hz AC Peak, t = 1 min.)
(V = 500 V)
VISO
RISO
2500
1011
—
—
— Vac(rms)
—Ω
Collector-Emitter Saturation Voltage
Isolation Capacitance(2)
(IC = 500 µA, IF = 1.0 mA) VCE (sat)
(VI-O = 0 V, f = 1 MHz) CISO
—
—
— 1.0
0.2 —
V
pF
Turn-On Time
(fig. 6)(IF = 5.0 mA, VCC = 10 V, RL = 100 Ω) ton
— 3.5 —
µs
Turn-Off Time
(fig. 6)(IF = 5.0 mA, VCC = 10 V, RL = 100 Ω) toff
— 95 —
µs
Rise Time
(fig. 6)(IF = 5.0 mA, VCC = 10 V, RL = 100 Ω)
tr
— 1.0 —
µs
Fall Time
(fig. 6)(IF = 5.0 mA, VCC = 10 V, RL = 100 Ω)
tf
— 2.0 —
µs
*All typicals at TA = 25°C
1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. Current Transfer Ratio (CTR) = IC/IF x 100%.
© 2002 Fairchild Semiconductor Corporation
Page 2 of 7
7/17/02
|