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PDF S80016LK7 Data sheet ( Hoja de datos )

Número de pieza S80016LK7
Descripción 128Mb :x4 x8 x16 SDRAM 3.3V
Fabricantes SPECtek 
Logotipo SPECtek Logotipo



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No Preview Available ! S80016LK7 Hoja de datos, Descripción, Manual

SYNCHRONOUS DRAM
Features:
Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access precharge time
Programmable burst lengths: 1, 2, or 4 using
Interleaved Burst Addressing
Auto Precharge and Auto Refresh modes
64ms, 4,096-cycle refresh quad-row refresh,
(15.6µs/row)
Self Refresh mode 1
LVTTL-compatible inputs and outputs
Single +3.3V ±0.3V power supply
The x16 devices are optimized for both single and
dual rank DIMM applications. The x8 devices are
optimized for single rank DIMM applications.
Options:
Designation:
Family:
SpecTek Memory
SAA
Configuration:
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
32M4
16M8
8M16
Design ID
SDRAM 128 Megabit Design
(Call SpecTek Sales for details on
availability of “x” placeholders)
Yx5x
Voltage and Refresh:
3.3V, Auto Refresh, 4K refresh
3.3V, Self or Auto Refresh1, 4K refresh
L4
M4
Package Types:
54-pin plastic TSOP (400 mil)
60-ball FBGA (8mm x 16mm)
60-ball FBGA (11mm x 13mm)
TK
FB2
FC2
Timing Types:
PC100 (3-3-3)
PC133 (3-3-3)
-8A
-75A
Part number example: SAA16M8Y95AL4TK-75A
(For part numbers prior to December
2004, refer to page 9 for decoding.)
128Mb: x4, x8, x16
SDRAM 3.3V
NOTES: 1. Only when specified. Consult Sales
2. Not available in x16 configuration
General Description:
The 128Mb SDRAM is a high-speed CMOS, dynamic
random-access memory containing 134,217,728 bits.
Each is internally configured as a quad-bank DRAM.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and continue
for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ
or WRITE command. The address bits registered
coincident with the ACTIVE command are used to select
the bank and row to be accessed (BA0, BA1 select the
bank; A0-A11 select the row). The address bits registered
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
1
www.spectek.com
SpecTek reserves the right to change products or
specifications without notice. © 2001, 2002, 2004 SpecTek

1 page




S80016LK7 pdf
54-PIN PLASTIC TSOP (400 mil)
(Package TK)
128Mb: x4, x8, x16
SDRAM 3.3V
NOTE: 1. All dimensions in millimeters MAX/MIN or typical where noted.
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
5
www.spectek.com
SpecTek reserves the right to change products or
specifications without notice. © 2001, 2002, 2004 SpecTek

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