S40032LK8 반도체 회로 부품 판매점
128Mb :x4 x8 x16 SDRAM 3.3V
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 SPECtek |
SYNCHRONOUS DRAM
Features:
• Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access precharge time
• Programmable burst lengths: 1, 2, or 4 using
Interleaved Burst Addressing
• Auto Precharge and Auto Refresh modes
• 64ms, 4,096-cycle refresh quad-row refresh,
(15.6µs/row)
• Self Refresh mode 1
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• The x16 devices are optimized for both single and
dual rank DIMM applications. The x8 devices are
optimized for single rank DIMM applications.
Options:
Designation:
Family:
SpecTek Memory
SAA
Configuration:
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
32M4
16M8
8M16
Design ID
SDRAM 128 Megabit Design
(Call SpecTek Sales for details on
availability of “x” placeholders)
Yx5x
Voltage and Refresh:
3.3V, Auto Refresh, 4K refresh
3.3V, Self or Auto Refresh1, 4K refresh
L4
M4
Package Types:
54-pin plastic TSOP (400 mil)
60-ball FBGA (8mm x 16mm)
60-ball FBGA (11mm x 13mm)
TK
FB2
FC2
Timing Types:
PC100 (3-3-3)
PC133 (3-3-3)
-8A
-75A
Part number example: SAA16M8Y95AL4TK-75A
(For part numbers prior to December
2004, refer to page 9 for decoding.)
128Mb: x4, x8, x16
SDRAM 3.3V
NOTES: 1. Only when specified. Consult Sales
2. Not available in x16 configuration
General Description:
The 128Mb SDRAM is a high-speed CMOS, dynamic
random-access memory containing 134,217,728 bits.
Each is internally configured as a quad-bank DRAM.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and continue
for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ
or WRITE command. The address bits registered
coincident with the ACTIVE command are used to select
the bank and row to be accessed (BA0, BA1 select the
bank; A0-A11 select the row). The address bits registered
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
1
www.spectek.com
SpecTek reserves the right to change products or
specifications without notice. © 2001, 2002, 2004 SpecTek
coincident with the READ or WRITE commands are used
to select the starting column location for the burst access.
The SDRAM provides for programmable READ or
WRITE burst lengths of 1, 2, or 4 locations with burst
terminate option using the Burst Interleaved Addressing
mode only. An AUTO PRECHARGE function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence.
The 128Mb SDRAM uses an internal pipelined
architecture to achieve high-speed operation. This
architecture is compatible with the 2n rule of prefetch
architectures, but it also allows the column address to be
changed on every clock cycle to achieve a high-speed,
fully random access. Precharging one bank while
accessing one of the other three banks will hide the
precharge cycles and provide seamless high-speed,
random-access operation.
The 128Mb SDRAM is designed to operate in 3.3V,
low-power memory systems. An auto refresh mode is
provided, along with a power-saving power-down mode.
All inputs and outputs are LVTTL-compatible. SDRAMs
offer substantial advances in DRAM operating
performance, including the abilities to synchronously
burst data at a high data rate with automatic column-
address generation, to interleave between internal banks
in order to hide precharge time, and to randomly change
column addresses on each clock cycle during a burst
access.
The x8 devices are optimized for single bank DIMM
applications. The x16 devices are available for both
single and dual bank DIMM applications.
_________________________________________
128Mb: x4, x8, x16
SDRAM 3.3V
Disclaimer:
Except as specifically provided in this document,
SpecTek makes no warranties, expressed or implied,
including, but not limited to, any implied warranties of
merchantability or fitness for a particular purpose.
Any claim against SpecTek must be made within one
year from the date of shipment from SpecTek, and
SpecTek has no liability thereafter. Any liability is limited
to replacement of the defective items or return of amounts
paid for defective items (at buyer’s election). In no event
will SpecTek be responsible for special, indirect,
consequential or incidental damages, even if SpecTek has
been advised for the possibility of such damages.
SpecTek’s liability from any cause pursuant to this
specification shall be limited to general monetary damages
in an amount not to exceed the total purchase price of the
products covered by this specification, regardless of the
form in which legal or equitable action may be brought
against SpecTek.
_________________________________
ABSOLUTE MAXIMUM RATINGS:
Voltage on Vdd Supply relative to Vss
-1 to +4.6V
Operating Temperature TA (Ambient)
Storage Temperature
25° to +70 °C
-55 to +150 °C
Power Dissipation
1W
Short Circuit Output Current
50 mA
Stresses beyond these may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at or beyond these conditions is not implied.
Exposure to these conditions for extended periods may affect
reliability.
CAPACITANCE:
Parameter
Input Capacitance: A0 - A11, BA0, BA1
Input Capacitance: RAS#, CAS#, WE#, DQM, CLK, CKE, CS#
Input/Output Capacitance: DQs
Symbol Min Max
CI1 1 5
CI2 1 5
CIO 1 6
Units
pF
pF
pF
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS:
Supply Voltage
Parameter
Symbol
Vdd/Vddq
Min
3.0
Max
3.6
Units
V
Input High (Logic 1) Voltage, All inputs
Input Low (Logic 0) Voltage, All inputs
Input Leakage Current Any input = 0V < VIN < Vdd All other pins not under test = 0V
Output Leakage Current DQs are disabled; 0V < VOUT < VddQ
Output High Voltage (IOUT = -4 mA)
Output Low Voltage (IOUT = 4 mA)
VIH
VIL
II
IOZ
VOH
VOL
2.2 Vdd + .3
-0.3 0.8
-10 10
-10 10
2.4
0.4
V
V
µA
µA
V
V
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
2
www.spectek.com
SpecTek reserves the right to change products or
specifications without notice. © 2001, 2002, 2004 SpecTek
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