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IRFP2410 반도체 회로 부품 판매점

Fourth Generation HEXFETs



International Rectifier 로고
International Rectifier
IRFP2410 데이터시트, 핀배열, 회로
HEXFET® Power MOSFET
Preliminary Data Sheet PD - 9.1251
IRFP2410
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
Ease of Paralleling
VDSS = 100V
RDS(on) = 0.025
ID = 61A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements
of most safety specifications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
61
43
240
230
1.5
±20
830
37
23
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.65
––––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
Revision 0


IRFP2410 데이터시트, 핀배열, 회로
IRFP2410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.025 VGS = 10V, ID = 37A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
16 ––– ––– S VDS = 25V, ID = 37A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100
nA
––– ––– -100
VGS = 20V
VGS = -20V
––– ––– 180
ID = 37A
––– ––– 30 nC VDS = 80V
––– ––– 69
VGS = 10V, See Fig. 6 and 13
––– 16 –––
VDD = 50V
––– 100 ––– ns ID = 37A
––– 120 –––
RG = 6.2
––– 97 –––
RD = 1.3Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH 6mm (0.25in.)
from package
––– 13 –––
and center of die contact
––– 4600 –––
VGS = 0V
––– 1100 --–– pF VDS = 25V
––– 200 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 61
showing the
A
integral reverse
––– ––– 240
p-n junction diode.
––– ––– 2.5 V TJ = 25°C, I S = 37A, VGS = 0V
––– 180 270 ns TJ = 25°C, I F = 37A
––– 990 1500 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 270µH
RG = 25, IAS = 37A. (See Figure 12)
ISD 37A, di/dt 200A/µs, V DD V(BR)DSS,
TJ 175°C
Pulse width 300µs; duty cycle 2%.




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