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PDF IGP01N120H2 Data sheet ( Hoja de datos )
| Número de pieza | IGP01N120H2 | |
| Descripción | HighSpeed 2-Technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IGP01N120H2,
IGD01N120H2
IGB01N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IGP01N120H2 1200V 1A 0.09mJ 150°C P-TO-220-3-1
Q67040-S4593
IGB01N120H2 1200V 1A 0.09mJ 150°C P-TO-263 (D2PAK) Q67040-S4592
IGD01N120H2 1200V 1A 0.09mJ 150°C P-TO-252 (DPAK) Q67040-S4591
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
Unit
V
A
±20 V
28 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04
1 page  
IGP01N120H2,
IGD01N120H2
IGB01N120H2
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
5A
4A Tj=+150°C
Tj=+25°C
3A
2A
1A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
4V
IC=2A
3V
I =1A
C
2V
IC=0.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2, Mar-04
5 Page 
IGP01N120H2,
IGD01N120H2
IGB01N120H2
TO-252AA (DPak)
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
R
S
T
U
dimensions
[mm]
symbol
min min
6.40 A 6.40 A
5.25 B 5.25 B
(0.65) C (0.65) C
0.63 D 0.63 D
2.28
E
2.19 F 2.19 F
0.76 G 0.76 G
0.90 H 0.90 H
5.97 K 5.97 K
9.40 L 9.40 L
0.46 M 0.46 M
0.87 N 0.87 N
0.51 P 0.51 P
5.00 R 5.00 R
4.17 S 4.17 S
0.26 T 0.26 T
-U-U
Power Semiconductors
11
Rev. 2, Mar-04
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IGP01N120H2.PDF ] | |
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