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ST24C08 반도체 회로 부품 판매점

8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection



ST Microelectronics 로고
ST Microelectronics
ST24C08 데이터시트, 핀배열, 회로
ST24C08, ST25C08
ST24W08, ST25W08
8 Kbit Serial I2C Bus EEPROM
with User-Defined Block Write Protection
1 MILLION ERASE/WRITE CYCLES with
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE:
– 3V to 5.5V for ST24x08 versions
– 2.5V to 5.5V for ST25x08 versions
HARDWARE WRITE CONTROL VERSIONS:
ST24W08 and ST25W08
PROGRAMMABLE WRITE PROTECTION
TWO WIRE SERIAL INTERFACE, FULLY I2C
BUS COMPATIBLE
BYTE and MULTIBYTE WRITE (up to 8
BYTES)
PAGE WRITE (up to 16 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
8
1
PSDIP8 (B)
0.25mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
This specification covers a range of 8 Kbits I2C bus
EEPROM products, the ST24/25C08 and the
ST24/25W08. In the text, products are referred to
as ST24/25x08, where "x" is: "C" for Standard
version and "W" for Hardware Write Control ver-
sion.
Table 1. Signal Names
PRE
E
SDA
SCL
MODE
WC
VCC
VSS
Write Protect Enable
Chip Enable Input
Serial Data Address Input/Output
Serial Clock
Multibyte/Page Write Mode
(C version)
Write Control (W version)
Supply Voltage
Ground
VCC
E
PRE
SCL
MODE/WC*
ST24x08
ST25x08
SDA
VSS
AI00860E
Note: WC signal is only available for ST24/25W08 products.
February 1999
1/16


ST24C08 데이터시트, 핀배열, 회로
ST24/25C08, ST24/25W08
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST24x08
ST25x08
PRE 1
NC 2
8 VCC
7 MODE/WC
E3
6 SCL
VSS 4
5 SDA
AI00861E
PRE
NC
E
VSS
ST24x08
ST25x08
18
27
36
45
AI01073E
VCC
MODE/WC
SCL
SDA
Warning: NC = Not Connected.
Warning: NC = Not Connected.
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature
–40 to 125
°C
TSTG Storage Temperature
–65 to 150
°C
TLEAD Lead Temperature, Soldering
(SO8 package)
40 sec
(PSDIP8 package) 10 sec
215
260
°C
VIO Input or Output Voltages
–0.6 to 6.5
V
VCC Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
4000
500
V
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 ).
3. EIAJ IC-121 (Condition C) (200pF, 0 ).
DESCRIPTION (cont’d)
The ST24/25x08 are 8 Kbit electrically erasable
programmable memories (EEPROM), organized
as 4 blocks of 256 x8 bits. They are manufactured
in STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
ance of one million erase/write cycles with a data
retention of 40 years.
Both Plastic Dual-in-Line and Plastic Small Outline
packages are available.
The memories are compatible with the I2C stand-
ard, two wire serial interface which uses a bi-direc-
tional data bus and serial clock. The memories
carry a built-in 4 bit, unique device identification
code (1010) corresponding to the I2C bus defini-
tion. This is used together with 1 chip enable input
(E) so that up to 2 x 8K devices may be attached
to the I2C bus and selected individually. The memo-
ries behave as a slave device in the I2C protocol
with all memory operations synchronized by the
serial clock. Read and write operations are initiated
by a START condition generated by the bus master.
The START condition is followed by a stream of 7
bits (identification code 1010), plus one read/write
bit and terminated by an acknowledge bit.
2/16




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