ST24C16 반도체 회로 부품 판매점
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
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 ST Microelectronics |
ST24C16, ST25C16
ST24W16, ST25W16
16 Kbit Serial I2C Bus EEPROM
with User-Defined Block Write Protection
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST24x16 versions
– 2.5V to 5.5V for ST25x16 versions
HARDWARE WRITE CONTROL VERSIONS:
ST24W16 and ST25W16
TWO WIRE SERIAL INTERFACE, FULLY I2C
BUS COMPATIBLE
BYTE and MULTIBYTE WRITE (up to 8
BYTES) for the ST24C16
PAGE WRITE (up to 16 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
8
1
PSDIP8 (B)
0.25mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
This specification covers a range of 16 Kbit I2C bus
EEPROM products, the ST24/25C16 and the
ST24/25W16. In the text, products are referred to
as ST24/25x16 where "x" is: "C" for Standard ver-
sion and "W" for hardware Write Control version.
The ST24/25x16 are 16 Kbit electrically erasable
programmable memories (EEPROM), organized
as 8 blocks of 256 x8 bits. These are manufactured
in STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
Table 1. Signal Names
PRE
PB0, PB1
SDA
SCL
MODE
WC
VCC
VSS
Write Protect Enable
Protect Block Select
Serial Data Address Input/Output
Serial Clock
Multybyte/Page Write Mode
(C version)
Write Control (W version)
Supply Voltage
Ground
VCC
2
PB0-PB1
PRE
SCL
MODE/WC*
ST24x16
ST25x16
SDA
VSS
AI00866B
Note: WC signal is only available for ST24/25W16 products.
February 1999
1/17
ST24/25C16, ST24/25W16
Figure 2A. DIP Pin Connections
Figure 2B. SO8 Pin Connections
ST24x16
ST25x16
PRE 1
PB0 2
8 VCC
7 MODE/WC
PB1 3
6 SCL
VSS 4
5 SDA
AI00867B
PRE
PB0
PB1
VSS
ST24x16
ST25x16
18
27
36
45
AI00500B
VCC
MODE/WC
SCL
SDA
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
TSTG
TLEAD
Ambient Operating Temperature
Storage Temperature
Lead Temperature, Soldering
(SO8)
(PSDIP8)
40 sec
10 sec
–40 to 125
–65 to 150
215
260
°C
°C
°C
VIO Input or Output Voltages
–0.6 to 6.5
V
VCC Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
4000
500
V
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and
other relevant quality documents.
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
3. 200pF through 0Ω; EIAJ IC-121 (condition C)
DESCRIPTION (cont’d)
ance of one million erase/write cycles with a data
retention of 40 years. The ST25x16 operates with
a power supply value as low as 2.5V. Both Plastic
Dual-in-Line and Plastic Small Outline packages
are available.
The memories are compatible with the I2C stand-
ard, two wire serial interface which uses a bi-direc-
tional data bus and serial clock. The memories
carry a built-in 4 bit, unique device identification
code (1010) corresponding to the I2C bus defini-
tion. The memories behave as slave devices in the
I2C protocol with all memory operations synchro-
nized by the serial clock. Read and write operations
are initiated by a START condition generated by the
bus master. The START condition is followed by a
stream of 4 bits (identification code 1010), 3 block
select bits, plus one read/write bit and terminated
by an acknowledge bit. When writing data to the
2/17
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ST24C16
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection - ST Microelectronics
