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ST Microelectronics |
ST24E16
ST25E16
16 Kbit Serial I2C EEPROM with Extended Addressing
COMPATIBLE with I2C EXTENDED
ADDRESSING
TWO WIRE SERIAL INTERFACE,
SUPPORTS 400kHz PROTOCOL
1 MILLION ERASE/WRITE CYCLES, OVER
the FULL SUPPLY VOLTAGE RANGE
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE
– 4.5V to 5.5V for ST24E16 version
– 2.5V to 5.5V for ST25E16 version
WRITE CONTROL FEATURE
BYTE and PAGE WRITE (up to 16 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
8
1
PSDIP8 (B)
0.25mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST24/25E16 are 16 Kbit electrically erasable
programmable memories (EEPROM), organized
as 8 blocks of 256 x8 bits. It is manufactured in
STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
ance of one million erase/write cycles over the full
supply voltage range, and a data retention of over
40 years. The ST25E16 operates with a power
supply value as low as 2.5V.
Table 1. Signal Names
E0 - E2
SDA
SCL
WC
VCC
VSS
Chip Enable Inputs
Serial Data Address Input/Output
Serial Clock
Write Control
Supply Voltage
Ground
February 1999
VCC
3
E0-E2
SCL
WC
ST24E16
ST25E16
SDA
VSS
AI01102B
1/16
ST24E16, ST25E16
Figure 2A. DIP Pin Connections
ST24E16
ST25E16
E0 1
E1 2
8 VCC
7 WC
E2 3
6 SCL
VSS 4
5 SDA
AI01103B
Figure 2B. SO Pin Connections
E0
E1
E2
VSS
ST24E16
ST25E16
18
27
36
45
AI01104C
VCC
WC
SCL
SDA
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
TSTG
TLEAD
Ambient Operating Temperature
Storage Temperature
Lead Temperature, Soldering
(SO8)
(PSDIP8)
40 sec
10 sec
–40 to 125
–65 to 150
215
260
°C
°C
°C
VIO Input or Output Voltages
–0.6 to 6.5
V
VCC Supply Voltage
–0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
4000
500
V
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and
other relevant quality documents.
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
3. 200pF through 0Ω; EIAJ IC-121 (condition C)
DESCRIPTION (cont’d)
Both Plastic Dual-in-Line and Plastic Small Outline
packages are available.
Each memory is compatible with the I2C extended
addressing standard, two wire serial interface
which uses a bi-directional data bus and serial
clock. The ST24/25E16 carry a built-in 4 bit, unique
device identification code (1010) corresponding to
the I2C bus definition. The ST24/25E16 behave as
slave devices in the I2C protocol with all memory
operations synchronized by the serial clock. Read
and write operations are initiated by a START
condition generated by the bus master. The START
condition is followed by a stream of 4 bits (identifi-
cation code 1010), 3 bit Chip Enable input to form
a 7 bit Device Select, plus one read/write bit and
terminated by an acknowledge bit.
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