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74HC14 반도체 회로 부품 판매점

Hex inverting Schmitt trigger



Philips 로고
Philips
74HC14 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
74HC14; 74HCT14
Hex inverting Schmitt trigger
Product specification
Supersedes data of 1997 Aug 26
2003 Oct 30


74HC14 데이터시트, 핀배열, 회로
Philips Semiconductors
Hex inverting Schmitt trigger
Product specification
74HC14; 74HCT14
FEATURES
Applications:
– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators.
Complies with JEDEC standard no. 7A
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 to +85 °C and 40 to +125 °C.
DESCRIPTION
The 74HC14 and 74HCT14 are high-speed Si-gate CMOS
devices and are pin compatible with low power Schottky
TTL (LSTTL). They are specified in compliance with
JEDEC standard no. 7A.
The 74HC14 and 74HCT14 provide six inverting buffers
with Schmitt-trigger action. They are capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
HC HCT
tPHL/tPLH
CI
CPD
propagation delay nA to nY
CL = 15 pF; VCC = 5 V 12
input capacitance
3.5
power dissipation capacitance per gate notes 1 and 2
7
17
3.5
8
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For type 74HC14 the condition is VI = GND to VCC.
For type 74HCT14 the condition is VI = GND to VCC 1.5 V.
UNIT
ns
pF
pF
2003 Oct 30
2




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