파트넘버.co.kr S904TR 데이터시트 PDF


S904TR 반도체 회로 부품 판매점

MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage



Vishay Telefunken 로고
Vishay Telefunken
S904TR 데이터시트, 핀배열, 회로
S904T/S904TR
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 9 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 9 V supply voltage.
Electrostatic sensitive device.
Observe precautions for handling.
C block
AGC
G2
RF in
G1
C block
RFC
D
S C block
VDD
RF out
94 9296
Features
D Integrated gate protection diodes
D Low noise figure
D 20mS forward transadmittance
D Biasing network on chip
21
D Improved cross modulation at gain reduction
D High AGC-range
D SMD package
12
94 9279
13 579
34
S904T Marking: 904
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
94 9278
43
95 10831
S904TR Marking: 90R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
12
30
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85068
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)


S904TR 데이터시트, 핀배열, 회로
S904T/S904TR
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
–VG1S = 5 V, VG2S = VDS = 0
±VG2S = 5 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
VDS = 9 V, VG1S = 0, VG2S = 4 V
VDS = 9 V, VG1S = nc, VG2S = 4 V
Gate 2 - source
cut-off voltage
VDS = 9 V, VG1S = nc, ID = 20 mA
Symbol Min Typ Max Unit
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
10 V
+IG1SS
–IG1SS
±IG2SS
50 mA
100 mA
20 nA
IDSS
IDSP
50 500 mA
7 10 14 mA
VG2S(OFF)
1.0
V
Electrical AC Characteristics
VDS = 9 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 9 V, VG2S = 1 to 4 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Symbol Min Typ Max Unit
y21s17 20 23 mS
Cissg1
2.0 2.5 pF
Crss 20 fF
Coss
0.9 pF
Gps 26 dB
Gps 16.5 20
DGps 40
dB
dB
F 1 dB
F 1.6 2.5 dB
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S
Using open collector switching
< 0.7 V is
transistor
feasible.
(inside of
PLL),
insert
10
kW
collector
resistor.
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 85068
Rev. 3, 20-Jan-99




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MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage - Vishay Telefunken



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