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P424 반도체 회로 부품 판매점

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS



International Rectifier 로고
International Rectifier
P424 데이터시트, 핀배열, 회로
Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
40A
Description
The P400 series of Integrated Power Circuits con-
sists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
P400
Units
ID
IFSM
I2t
I2t
VRRM
VINS
TJ
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
40
80
385
400
745
680
7450
400 to 1200
2500
- 40 to 125
A
°C
A
A
A2s
A2s
A2s
V
V
°C
www.irf.com
1


P424 데이터시트, 핀배열, 회로
P400 Series
Bulletin I2776 rev. E 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
P401, P421, P431
VRRM maximum repetitive VRSM maximum non-
peak reverse voltage repetitive peak reverse
voltage
VV
VDRM maximum
repetitive peak off-state
voltage
V
400 500 400
P402, P422, P432
600
700
600
P403, P423, P433
800
900
800
P404, P424, P434
1000
1100
1000
P405, P425, P435
1200
1300
1200
IRRM max.
@ TJ max.
mA
10
On-state Conduction
Parameter
ID
I TSM
I FSM
Maximum DC output current
Max. peak one-cycle
non-repetitive on-state
or forward current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
V Low value of threshold voltage
T(TO)1
VT(TO)2 High value of threshold voltage
r t1 Low level value of on-state
slope resistance
r t2 High level value of on-state
slope resistance
VTM Max. peak on-state or
V forward voltage drop
FM
di/dt Maximum non repetitive rate of
rise of turned on current
I Maximum holding current
H
IL Maximum latching current
P400
40
385
400
325
340
745
680
530
480
7450
0.83
1.03
9.61
7.01
1.4
200
130
250
Units Conditions
A @ TC = 80°C, full bridge circuits
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms
t = 8.3ms
100% VRRM
reapplied
Sinusoidal half wave,
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
A2s
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
I2t for time tx = I2t . tx
(16.7%
x
π
x
I
T(AV)
<
I
<
π
x
I ),
T(AV)
T
J
=
T
J
max.
V
(I > π x IT(AV)), TJ = TJ max.
(16.7%
x
π
x
I
T(AV)
<
I
<
π
x
I ),
T(AV)
T
J
=
T
J
max.
m
(I
>
π
x
I ),
T(AV)
T
J
=
T
J
max.
TJ = 25°C, ITM = π x IT(AV)
V
T
J
=
25°C,
ITM
=
π
x
I F(AV)
A/µs
mA
mA
TJ = 125°C from 0.67 VDRM
ITM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs
T = 25°C anode supply = 6V, resistive load
J
TJ = 25°C anode supply = 6V, resistive load
2 www.irf.com




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