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Panasonic Semiconductor |
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734
CNC2S501, CNC7C502, CNC7H501
Optoisolators
Overview
The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the four-
channel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (VCEO > 350V).
Features
High collector to emitter breakdown voltage : VCEO > 300 V,
A type : VCEO > 350 V
High current transfer ratio with Darlington phototransistor output :
CTR = 4000% (typ.)
High I/O isolation voltage : VISO ≥ 5000 Vrms
Small DIL package for saving mounting space
UL listed (UL File No. E79920)
A-type models have a guaranteed internal insulating distance of 0.4 mm
Applications
Telephones
Telephone exchange
FAX
Programmable controllers
Signal transfer between circuits with different potentials and impedances
Pin Connection
CNZ3731
CNC2S501
CNZ3734
CNC7H501
1
41
16
CNZ3731/CNC2S501
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
14
23
7.62±0.3
6.2±0.5
0 to 15˚
0 to 15˚
1: Anode
2: Cathode
3: Emitter
4: Collector
CNC7C501/CNC7C502
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
18
27
36
45
7.62±0.3
6.2±0.5
0 to 15˚
0 to 15˚
1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector
CNZ3734/CNC7H501
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
7.62±0.3
6.2±0.5
0 to 15˚
1 , 3 , 5 , 7 : Anode
0
to
15˚
2,4,6,8:
9,11,13,15:
Cathode
Emitter
10,12,14,16: Collector
2
CNC7C501
CNC7C502
1
3
Top View
8
2
3
4
5
15
14
13
12
2
76
11
3
67
10
4 58 9
Top View
Top View
1
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Optoisolators (Photocouplers)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
CNZ3731
Ratings
CNC7C501
CNZ3734
CNC2S501
CNC7C502
CNC7H501
Reverse voltage (DC) VR
6
6
Input (Light Forward current (DC) IF
50
50
emitting diode) Pulse forward current IFP*1
1
1
Power dissipation
PD*2
75
75
Collector current
IC
150
150
Output (Photo Collector to emitter voltage VCEO
300
350
transistor) Emitter to collector voltage VECO
0.3
0.3
Collector power dissipation PC*3
300
150
300 150
Total power dissipation
PT 320
200
320 200
Isolation voltage, input to output
VISO*4
5000
5000
Operating ambient temperature Topr –30 to +100
–30 to +100
Storage temperature
Tstg –55 to +125
–55 to +125
*1 Pulse width ≤ 100 µs, repeat 100 pps
*2 Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C.
*3 Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501).
Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).
*4 AC 1min., RH < 60 %
Unit
V
mA
A
mW
mA
V
V
mW
mW
Vrms
˚C
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Reverse current (DC)
Input
characteristics Forward voltage (DC)
Capacitance between pins
IR VR = 3V
VF IF = 50mA
Ct VR = 0V, f = 1MHz
Output Collector cutoff current
ICEO VCE = 200V
characteristics Collector to emitter capacitance CC VCE = 10V, f = 1MHz
DC current transfer ratio CTR*1 VCE = 2V, IF = 1mA
Isolation capacitance, input to output CISO f = 1MHz
Transfer Isolation resistance, input to output RISO VISO = 500V
characteristics Rise time
tr*2 VCC = 10V, IC = 10mA,
Fall time
tf*3 Rt = 100Ω
Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA
*1 DC current transfer ratio (CTR) is a ratio of output current against DC input current.
min typ max Unit
10 µA
1.35 1.5 V
30 pF
200 nA
10 pF
1000 4000
%
0.7 pF
1011 Ω
40 µs
15 µs
1.0 V
CTR =
IC
IF
× 100 (%)
*2 tr : Time required for the collector current to increase from 10% to 90% of its final value
*3 tf : Time required for the collector current to decrease from 90% to 10% of its initial value
2
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