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ON3731 반도체 회로 부품 판매점

Optoisolators



Panasonic Semiconductor 로고
Panasonic Semiconductor
ON3731 데이터시트, 핀배열, 회로
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734
CNC2S501, CNC7C502, CNC7H501
Optoisolators
Overview
The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the four-
channel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (VCEO > 350V).
Features
High collector to emitter breakdown voltage : VCEO > 300 V,
A type : VCEO > 350 V
High current transfer ratio with Darlington phototransistor output :
CTR = 4000% (typ.)
High I/O isolation voltage : VISO 5000 Vrms
Small DIL package for saving mounting space
UL listed (UL File No. E79920)
A-type models have a guaranteed internal insulating distance of 0.4 mm
Applications
Telephones
Telephone exchange
FAX
Programmable controllers
Signal transfer between circuits with different potentials and impedances
Pin Connection
CNZ3731
CNC2S501
CNZ3734
CNC7H501
1
41
16
CNZ3731/CNC2S501
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
14
23
7.62±0.3
6.2±0.5
0 to 15˚
0 to 15˚
1: Anode
2: Cathode
3: Emitter
4: Collector
CNC7C501/CNC7C502
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
18
27
36
45
7.62±0.3
6.2±0.5
0 to 15˚
0 to 15˚
1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector
CNZ3734/CNC7H501
Unit : mm
LED Mark
5.2 max.
0.5 min.
2.54 min.
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
7.62±0.3
6.2±0.5
0 to 15˚
1 , 3 , 5 , 7 : Anode
0
to
15˚
2,4,6,8:
9,11,13,15:
Cathode
Emitter
10,12,14,16: Collector
2
CNC7C501
CNC7C502
1
3
Top View
8
2
3
4
5
15
14
13
12
2
76
11
3
67
10
4 58 9
Top View
Top View
1


ON3731 데이터시트, 핀배열, 회로
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Optoisolators (Photocouplers)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
CNZ3731
Ratings
CNC7C501
CNZ3734
CNC2S501
CNC7C502
CNC7H501
Reverse voltage (DC) VR
6
6
Input (Light Forward current (DC) IF
50
50
emitting diode) Pulse forward current IFP*1
1
1
Power dissipation
PD*2
75
75
Collector current
IC
150
150
Output (Photo Collector to emitter voltage VCEO
300
350
transistor) Emitter to collector voltage VECO
0.3
0.3
Collector power dissipation PC*3
300
150
300 150
Total power dissipation
PT 320
200
320 200
Isolation voltage, input to output
VISO*4
5000
5000
Operating ambient temperature Topr –30 to +100
–30 to +100
Storage temperature
Tstg –55 to +125
–55 to +125
*1 Pulse width 100 µs, repeat 100 pps
*2 Input power derating ratio is 0.75 mW/˚C at Ta 25˚C.
*3 Output power derating ratio is 3.0 mW/˚C at Ta 25˚C (CNZ3731, CNC2S501).
Output power derating ratio is 0.75 mW/˚C at Ta 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).
*4 AC 1min., RH < 60 %
Unit
V
mA
A
mW
mA
V
V
mW
mW
Vrms
˚C
˚C
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Reverse current (DC)
Input
characteristics Forward voltage (DC)
Capacitance between pins
IR VR = 3V
VF IF = 50mA
Ct VR = 0V, f = 1MHz
Output Collector cutoff current
ICEO VCE = 200V
characteristics Collector to emitter capacitance CC VCE = 10V, f = 1MHz
DC current transfer ratio CTR*1 VCE = 2V, IF = 1mA
Isolation capacitance, input to output CISO f = 1MHz
Transfer Isolation resistance, input to output RISO VISO = 500V
characteristics Rise time
tr*2 VCC = 10V, IC = 10mA,
Fall time
tf*3 Rt = 100
Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA
*1 DC current transfer ratio (CTR) is a ratio of output current against DC input current.
min typ max Unit
10 µA
1.35 1.5 V
30 pF
200 nA
10 pF
1000 4000
%
0.7 pF
1011
40 µs
15 µs
1.0 V
CTR =
IC
IF
× 100 (%)
*2 tr : Time required for the collector current to increase from 10% to 90% of its final value
*3 tf : Time required for the collector current to decrease from 90% to 10% of its initial value
2




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