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PDF ON1109 Data sheet ( Hoja de datos )
| Número de pieza | ON1109 | |
| Descripción | Photo Interrupter | |
| Fabricantes | Panasonic Semiconductor | |
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Hay una vista previa y un enlace de descarga de ON1109 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transmissive Photosensors (Photo Interrupters)
ON1109
Photo Interrupter
For contactless SW, object detection
Outline
ON1109 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Highly precise position detection : 0.7 mm
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Deep and wide gap between emitting and detecting elements
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Input (Light
emitting diode)
Output (Photo
transistor)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
VR
IF
PD*1
IC
VCEO
VECO
PC*2
3
50
75
20
30
5
100
V
mA
mW
mA
V
V
mW
Temperature Operating ambient temperature Topr –25 to +85 ˚C
Storage temperature
Tstg –30 to +100 ˚C
Mark for indicating
LED side ø1.5
2-C2.0±0.3
Unit : mm
28.0±0.35
17.0±0.3
5.0±0.2
A
Device
center
1.0±0.2
A'
(12.0)
2-0.45±0.2
(2.54)
SEC. A-A'
2 22.4±0.2 3
2-ø3.2±0.2
1 42
3
14
Pin connection
(Note) ( ) Dimension is reference
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.34 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
VF IF = 50mA
1.2 1.5 V
characteristics Reverse current (DC)
IR VR = 3V
10 µA
Output Collector cutoff current
ICEO VCE = 10V
200 nA
characteristics Collector to emitter capacitance CC VCE = 10V, f = 1MHz
5 pF
Collector current
Transfer
Response time
characteristics
IC VCE = 10V, IF = 20mA
tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω
0.3
6
mA
µs
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
0.3 V
* Switching time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ON1109.PDF ] | |
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