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NE3210S01-T1B 반도체 회로 부품 판매점

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET



NEC 로고
NEC
NE3210S01-T1B 데이터시트, 핀배열, 회로
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
Marking
K
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Dissipation
Ptot
Channel Temperature
Tch
Storage Temperature
Tstg
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
Unit
V
V
mA
µA
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Characteristics
Symbol MIN.
TYP.
Drain to Source Voltage
VDS 1
2
Drain Current
ID 5 10
Input Power
Pin
MAX.
3
15
0
Unit
V
mA
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1999


NE3210S01-T1B 데이터시트, 핀배열, 회로
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Characteristics
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
IGSO
IDSS
VGS (off)
gm
NF
Ga
Test Conditions
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, IDS = 100 µA
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 10 mA
f = 12 GHz
NE3210S01
MIN.
15
–0.2
40
12.0
TYP.
0.5
40
–0.7
55
0.35
13.5
MAX.
10
70
–2.0
0.45
Unit
µA
mA
V
mS
dB
dB
2 Data Sheet P14067EJ2V0DS00




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NE3210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET - NEC



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X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET - NEC