N-150NS 반도체 회로 부품 판매점
Cell Type N-150NS
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 Sanyo Semicon Device |
Cell Type N-150NS
Specifications
Nominal Capacity
Nominal Voltage
D Standard Charging Current
d Charging Time
Ambient
Temperature
Charge
Discharge
Storage
Internal Impedance (Av.)
(at 50% discharge)
28.5 ±0.3
mm
H
1.122 ±0.012 inch Weight
Dimensions
of
11.5 ±0.2
D
mm
Bare Cell
0.453 ±0.008 inch Dimensions(D)×(H)
d 5.5
0.217
mm (with tube)
inch
Typical Characteristics
135mAh
1.2V
4.5mA
above 48Hrs.
0°C to +70°C [+32°F to 158°F]
-20°C to +70°C [ -4°F to 158°F]
-30°C to +70°C [ -22°F to 158°F]
50.0mΩ
(at 1000Hz)
9g/0.32oz
12.0
0
-0.5
× 29.3
0
-1
mm
0.47
0
-0.02
× 1.15
0
-0.04
inch
Charge
1.6
1.5
1.4
1.3
0 6 12 18 24 30
Charge Time (Hrs.)
Cell Capacity (at various discharge rate)
Charge : 4.5mA
0˚C/32˚F
20˚C/68˚F
40˚C/104˚F
60˚C/140˚F
36 42 48
100
90 Charge : 4.5mA×48Hrs.
Discharge : End Volt 1.0V
80 at 20˚C/68˚F
70
60
50
40
0 0.2 0.4 0.6 0.8 1
Discharge Rate (C)
Discharge (at very low rate)
10000
7000
6000
5000
4000
3000
2000
1000
800
700
Charge : 4.5mA×48Hrs.
Discharge : End Volt 1.0V
10µA
50µA
100µA
100
0
10 20 30 40 50 60 70 80˚C
32 50 68 86 104 122 140 158 176˚F
Operating Temperature
Discharge (at various temperature)
1.4
Charge : 4.5mA×48Hrs.
Discharge : 50µA
1.2
1.0
80˚C/176˚F
0˚C/32˚F
0.8
60˚C/140˚F 40˚C/104˚F 20˚C/68˚F
0 20 40 60 80 100 120 140
Discharge Time (Days)
160
Discharge (at low rate)
1.4
1.2
Charge : 4.5mA×48Hrs.
at 20˚C/68˚F
1.0
0.8
(0.5C)
(0.2C)
(0.1C)
0 2 4 6 8 10 12 14 16
Discharge Time (Hrs.)
Temperature (Charge & Discharge)
100
90
80
Charge Characteristics
70 Discharge Characteristics
Condition Charge : 4.5mA×48Hrs.
60 Discharge : 27mA
50 (End Volt 1.0V)
40
-20 -10
0
10 20 30 40 50 60 70 80˚C
-4 14 32 50 68 86 104 122 140 158 176˚F
Operating Temperature
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제조업체: Sanyo Semicon Device
( sanyo )
N-150NS data
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[ N-150NS.PDF ]
[ N-150NS 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
