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New Japan Radio |
NJG1107KB2
1.5/1.9GHz LNA GaAs MMIC
nGENERAL DESCRIPTION
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and thin package of FLP6 is adopted.
nPACKAGE OUTLINE
NJG1107KB2
nFEATURES
lLow voltage operation
lLow current consumption
lHigh small signal gain
lLow noise figure
lHigh Input IP3
lUltra small & ultra thin package
+2.7V typ.
3.0mA typ.
17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
-4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
l This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
nPIN CONFIGURATION
KB2 Type
(Top View)
4
5
AMP
6
3 PIN Connection
1.RFout
2.GND
2
3.EXTCAP
4.GND
5.GND
6.RFin
1
Orientation Mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1-
NJG1107KB2
nABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain Voltage
Input Power
Power Dissipation
Operating Temp.
Storage Temp.
SYMBOL
VDD
Pin
PD
Topr
Tstg
CONDITIONS
VDD=2.7V
(Ta=+25°C, Zs=Zl=50Ω)
RATINGS
UNIT
6.0 V
+15 dBm
450 mW
-40~+85
°C
-55~+125
°C
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNIT
Operating Frequency freq1
1.47
1.49
1.51 GHz
Drain Voltage
Operating Current
Small Signal Gain
VDD
IDD
Gain
RF OFF
2.5 2.7 5.5 V
- 3.0 3.8 mA
15.0
17.0
19.0 dB
Gain Flatness
Noise Figure
Gflat f=1.47~1.51GHz
NF
- 0.5 1.0 dB
- 1.2 1.4 dB
Pout at 1dB Gain
Compression point
P-1dB
-6.0 -2.0
- dBm
Input 3rd Order
Intercept Point
IIP3
f=1.49+1.4901GHz
RFin=-35dBm
-6.0
-4.0
- dBm
RF Input Port
VSWR
VSWRi
- 1.6 2.2
RF Output Port
VSWR
VSWRo
1.6 2.2
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.96GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNIT
Operating Frequency freq2
1.89
1.96
1.99 GHz
Drain Voltage
Operating Current
Small Signal Gain
VDD
IDD
Gain
RF OFF
2.5 2.7 5.5 V
- 3.0 3.8 mA
13.0
15.0
17.0 dB
Gain Flatness
Noise Figure
Gflat f=1.89~1.99GHz
NF
- 0.5 1.0 dB
- 1.2 1.4 dB
Pout at 1dB Gain
Compression point
Input 3rd order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
P-1dB
IIP3
VSWRi
VSWRo
f=1.96+1.9601GHz
RFin=-30dBm
-3.0
-6.0
-
-
+1.0
-2.0
1.6
1.6
- dBm
- dBm
2.2
2.2
-2-
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