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74LVC2G14GM 반도체 회로 부품 판매점

Dual inverting Schmitt-trigger with 5 V tolerant input



NXP Semiconductors 로고
NXP Semiconductors
74LVC2G14GM 데이터시트, 핀배열, 회로
INTEGRATED CIRCUITS
DATA SHEET
74LVC2G14
Dual inverting Schmitt-trigger with
5 V tolerant input
Product specification
Supersedes data of 2003 Jul 31
2004 Sep 08


74LVC2G14GM 데이터시트, 핀배열, 회로
Philips Semiconductors
Dual inverting Schmitt-trigger with
5 V tolerant input
Product specification
74LVC2G14
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant input/output for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Mulltiple package options
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 °C to +85 °C and
40 °C to +125 °C.
APPLICATIONS
Wave and pulse shapers for highly noisy environments
Astable multivibrators
Monostable multivibrators.
DESCRIPTION
The 74LVC2G14 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of this device as translator in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G14A provides two inverting buffers with
Schmitt-trigger action. It is capable of transforming slowly
changing input signals into sharply defined, jitter-free
output signals.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C
SYMBOL
tPHL/tPLH
CI
CPD
PARAMETER
propagation delay input nA to output nY
input capacitance
power dissipation capacitance per buffer
CONDITIONS
VCC = 1.8 V; CL = 30 pF; RL = 1 k
VCC = 2.5 V; CL = 30 pF; RL = 500
VCC = 2.7 V; CL = 50 pF; RL = 500
VCC = 3.3 V; CL = 50 pF; RL = 500
VCC = 5.0 V; CL = 50 pF; RL = 500
VCC = 3.3 V; notes 1 and 2
TYPICAL
5.6
3.7
4.1
3.9
2.7
3.5
18.1
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC.
UNIT
ns
ns
ns
ns
ns
pF
pF
2004 Sep 08
2




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