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MC-4516CD641ES-A10 반도체 회로 부품 판매점

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM



NEC 로고
NEC
MC-4516CD641ES-A10 데이터시트, 핀배열, 회로
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CD641ES, 4516CD641PS
16M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM
module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency (MAX.) Access time from CLK (MAX.)
MC-4516CD641ES-A80
MC-4516CD641ES-A10
5 MC-4516CD641PS-A80
5 MC-4516CD641PS-A10
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
125 MHz
100 MHz
100 MHz
77 MHz
125 MHz
100 MHz
100 MHz
77 MHz
6 ns
6 ns
6 ns
7 ns
6 ns
6 ns
6 ns
7 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential / Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3 V ±0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14014EJ5V0DS00 (5th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999


MC-4516CD641ES-A10 데이터시트, 핀배열, 회로
MC-4516CD641ES, 4516CD641PS
Ordering Information
Part number
MC-4516CD641ES-A80
Clock frequency
MHz (MAX.)
125 MHz
MC-4516CD641ES-A10
5 MC-4516CD641PS-A80
5 MC-4516CD641PS-A10
100 MHz
125 MHz
100 MHz
Package
Mounted devices
144-pin Small Outline DIMM
(Socket Type)
Edge connector: Gold plated
31.75 mm height
8 pieces of µPD45128163G5 (Rev. E)
(10.16mm (400) TSOP(II))
8 pieces of µPD45128163G5 (Rev. P)
(10.16mm (400) TSOP(II))
2 Data Sheet M14014EJ5V0DS00




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MC-4516CD641ES-A10

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM - NEC