FS10SM-18A 반도체 회로 부품 판매점
HIGH-SPEED SWITCHING USE
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 Mitsubishi |
FS10SM-18A
MITSUBISHI Nch POWER MOSFET
FS10SM-18A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
q we
5.45 5.45
4.4
0.6 2.8
¡VDSS ................................................................................ 900V
¡rDS (ON) (MAX) ................................................................ 1.2Ω
¡ID ......................................................................................... 10A
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
4
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
900
±30
10
30
200
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10SM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
900 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
—
0.93
1.20
Ω
—
4.65 6.00
V
6.0 10.0 —
S
— 2250 — pF
— 230 — pF
— 42 — pF
— 38 — ns
— 46 — ns
— 260 — ns
— 75 — ns
— 1.0 1.5 V
— — 0.625 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
Tch = 25°C
Pulse Test
16
VGS = 20V
10V
12
PD = 200W
8 5V
4
4V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
102
7
5
3
2 tw = 10ms
101
7 100ms
5
3
2 1ms
100
7
5 TC = 25°C
3 Single Pulse
2
10ms
100ms
DC
10–1
3
5 7 101 2 3
5 7 102 2 3
5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 20V
10V
TC = 25°C
Pulse Test
8
5V
6
4
4.5V
2
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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FS10SM-18A data
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[ FS10SM-18A.PDF ]
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