파트넘버.co.kr FS10KM-6 데이터시트 PDF


FS10KM-6 반도체 회로 부품 판매점

HIGH-SPEED SWITCHING USE



Mitsubishi 로고
Mitsubishi
FS10KM-6 데이터시트, 핀배열, 회로
FS10KM-6
MITSUBISHI Nch POWER MOSFET
FS10KM-6
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.68
¡ID .......................................................................................... 10A
¡Viso ................................................................................ 2000V
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
300
±30
10
30
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
W
°C
°C
Vrms
g
Feb.1999


FS10KM-6 데이터시트, 핀배열, 회로
MITSUBISHI Nch POWER MOSFET
FS10KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V
Channel to case
Limits
Unit
Min. Typ. Max.
300 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
0.52
0.68
— 2.6 3.4 V
4.0 6.0 — S
— 570 — pF
— 110 — pF
— 20 — pF
— 17 — ns
— 25 — ns
— 60 — ns
— 30 — ns
— 1.5 2.0 V
— — 3.57 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
PD=
10V
35W
TC = 25°C
Pulse Test
16
7V
12
6V
8
4 5V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
7
5
3
2
tw=10µs
101
7 100µs
5
3
2 1ms
100
7
5
10ms
3
2 TC = 25°C
Single Pulse
10–1
DC
7
5
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10
PD=
10V
35W
6V
8
6
5.5V
4
5V
2
TC = 25°C
Pulse Test
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999




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